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A Dynamic-Biased Resistor-Based CMOS Temperature Sensor With a Duty-Cycle-Modulated Output
IEEE Transactions on Circuits and Systems II: Express Briefs ( IF 4.0 ) Pub Date : 2020-06-01 , DOI: 10.1109/tcsii.2020.2999272
Zhong Tang , Yun Fang , Xiao-Peng Yu , Zheng Shi , Ling Lin , Nick Nianxiong Tan

This brief presents a resistor-based CMOS temperature sensor with a duty-cycle-modulated output. A dynamic-biased resistive analog front-end (AFE) is proposed to generate voltages with positive and negative temperature dependencies. The voltages are then converted into a digital-friendly duty-cycle-modulated output, which can be proceeded by digital systems directly. Fabricated in a standard 0.13-μm CMOS process, this sensor occupies a silicon area of 0.025 mm2 and can operate with a supply voltage as low as 0.8 V. It has a measured inaccuracy of ±0.85 °C (3σ) from -40 °C to 85 °C after a two-point calibration. Measured at room temperature, it shows a resolution of 0.226 °C in a 0.25-ms conversion time while dissipating 12.5 μW.

中文翻译:


具有占空比调制输出的动态偏置电阻 CMOS 温度传感器



本简介介绍了一种基于电阻器的 CMOS 温度传感器,具有占空比调制输出。建议采用动态偏置电阻模拟前端 (AFE) 来生成具有正温度依赖性和负温度依赖性的电压。然后,电压被转换为数字友好的占空比调制输出,可由数字系统直接处理。该传感器采用标准 0.13 μm CMOS 工艺制造,占据 0.025 mm2 的硅面积,可在低至 0.8 V 的电源电压下工作。-40 °C 范围内的测量误差为 ±0.85 °C (3σ)两点校准后升至 85 °C。在室温下测量,其分辨率为 0.226 °C,转换时间为 0.25 毫秒,功耗为 12.5 μW。
更新日期:2020-06-01
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