This brief presents a resistor-based CMOS temperature sensor with a duty-cycle-modulated output. A dynamic-biased resistive analog front-end (AFE) is proposed to generate voltages with positive and negative temperature dependencies. The voltages are then converted into a digital-friendly duty-cycle-modulated output, which can be proceeded by digital systems directly. Fabricated in a standard 0.13- $\mu \text{m}$ CMOS process, this sensor occupies a silicon area of 0.025 mm² and can operate with a supply voltage as low as 0.8 V. It has a measured inaccuracy of ±0.85 °C ( $3\sigma $ ) from −40 °C to 85 °C after a two-point calibration. Measured at room temperature, it shows a resolution of 0.226 °C in a 0.25-ms conversion time while dissipating 12.5 $\mu \text{W}$ .

中文翻译：

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具有占空比调制输出的基于动态偏置电阻的 CMOS 温度传感器

本简介介绍了一种具有占空比调制输出的基于电阻器的 CMOS 温度传感器。建议使用动态偏置电阻模拟前端 (AFE) 来生成具有正负温度相关性的电压。然后将电压转换为数字友好的占空比调制输出，可以直接由数字系统处理。以标准 0.13- $\mu \text{m}$ 该传感器采用 CMOS 工艺，占据 0.025 mm ²的硅面积，可在低至 0.8 V 的电源电压下工作。其测量误差为 ±0.85 °C ( $3\西格玛$ ) 在两点校准后从 -40 °C 到 85 °C。在室温下测量，它在 0.25 毫秒的转换时间内显示 0.226 °C 的分辨率，同时耗散 12.5 $\mu \text{W}$ .