当前位置: X-MOL 学术IEEE Trans. Circuit Syst. II Express Briefs › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
A 2 nW 0.25 V 140 dB-FOM inverter-based first order Σ modulator
IEEE Transactions on Circuits and Systems II: Express Briefs ( IF 4.4 ) Pub Date : 2020-09-01 , DOI: 10.1109/tcsii.2020.3005232
Alessandro Catania , Lorenzo Benvenuti , Andrea Ria , Giuseppe Manfredini , Massimo Piotto , Paolo Bruschi

In this brief, we introduce an ultra-low voltage, ultra-low power, inverter-based, discrete-time, 1st order ${\Delta } {\Sigma }$ modulator. It exploits an original switched-capacitor integrator to achieve interesting performances with supply voltages as low as 0.25 V. It also employs a clock-boosting technique to improve pass-gate operation. A prototype has been designed and produced using a 0.18 $\mu \text{m}$ CMOS process by UMC. The modulator reaches an SNDR of 37.2 dB at a voltage of 0.25 V, with a power consumption of only 2.1 nW, corresponding to a FOM of 140.3 dB. The DC characteristics show an offset of 4.3 mV, a gain error of 2.5% (standard deviations), with an INL of 0.6%.

中文翻译:

基于 2 nW 0.25 V 140 dB-FOM 逆变器的一阶 Σ 调制器

在这个简短,我们引入一个超低电压,超低功耗,基于逆变器的,离散时间,1顺序 ${\Delta } {\Sigma }$ 调制器。它利用原始的开关电容器积分器在低至 0.25 V 的电源电压下实现有趣的性能。它还采用时钟提升技术来改善传输门操作。原型已使用 0.18 $\mu \text{m}$ 联电CMOS工艺。调制器在 0.25 V 电压下达到 37.2 dB 的 SNDR,功耗仅为 2.1 nW,对应于 140.3 dB 的 FOM。DC 特性显示偏移为 4.3 mV,增益误差为 2.5%(标准偏差),INL 为 0.6%。
更新日期:2020-09-01
down
wechat
bug