We present the first Gallium Nitride (GaN)-based demodulator system dedicated to demodulating Load-Shift Keying (LSK) modulated signals that can operate at high temperature (HT). GaN500 technology is adopted to implement the proposed demodulator. Stable DC output characteristics of epitaxial AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) operating at up to 500°C enable designing HT ICs. Conventional digital gates such as inverters, NAND2, NAND3, delay elements and a D Flip-Flop are employed to implement the proposed demodulator. The demodulation system is fabricated on a 2.67 mm2 silicon carbide (SiC) substrate and experimentally validated at 160°C, whereas the building blocks (inverters and NANDs) show a stable operation at HT up to 400°C. A minimum of 1 V amplitude difference can be detected between the high voltage level (HVL = ±5 V) and low voltage level (LVL = ±4 V) of an applied LSK modulated signal to recover transmitted digital data. Two high-voltage supply levels (±14 V) are required to operate the system. Its total power consumption is 3.4 W.

中文翻译：

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适用于高温应用的全集成数字 GaN 基 LSK 解调器


我们推出了首款基于氮化镓 (GaN) 的解调器系统，专用于解调可在高温 (HT) 下运行的负载转移键控 (LSK) 调制信号。采用 GaN500 技术来实现所提出的解调器。外延 AlGaN/GaN 异质结场效应晶体管 (HFET) 的稳定直流输出特性可在高达 500°C 的温度下工作，从而能够设计 HT IC。采用反相器、NAND2、NAND3、延迟元件和 D 触发器等传统数字门来实现所提出的解调器。该解调系统在 2.67 mm2 碳化硅 (SiC) 基板上制造，并在 160°C 下进行了实验验证，而构建模块（逆变器和 NAND）在高达 400°C 的 HT 下表现出稳定运行。可以检测到所应用的 LSK 调制信号的高电压电平 (HVL = ±5 V) 和低电压电平 (LVL = ±4 V) 之间最小 1 V 的幅度差异，以恢复传输的数字数据。操作系统需要两个高压电源电平 (±14 V)。其总功耗为3.4W。