The selection of design structure parameters is a critical step for meeting the performance requirement for silicon on insulator (SOI) lateral power devices, especially when multiple design constraints are presented. In this letter, we propose a fully-automated structural design method for SOI lateral power device based on a Bayesian optimization (BO) framework. Given the design target characterized by breakdown voltage (BV) and on-resistance ( $\text{R}_{\textit {on}}$ ) specifications, the proposed approach searches for the optimal structure that can satisfy the constraints. The experimental results demonstrate that designs obtained from our optimization framework fall within 5% range from the desired specifications when evaluated using technology computer-aided design (TCAD) simulation, which proves the efficiency of the proposed approach. Besides, the efficiency of our proposed approach is reflected by its runtime which does not exceed 10 minutes for more than 70% of the cases. We believe that this modeling method can greatly accelerate the design exploration process of power devices for designers.

中文翻译：

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基于贝叶斯优化的绝缘体上硅横向功率器件结构参数的自动选择

设计结构参数的选择是满足绝缘体上硅 (SOI) 横向功率器件性能要求的关键步骤，尤其是在存在多个设计约束时。在这封信中，我们提出了一种基于贝叶斯优化 (BO) 框架的 SOI 横向功率器件的全自动结构设计方法。给定以击穿电压 (BV) 和导通电阻 ( $\text{R}_{\textit {on}}$ ) 规格为特征的设计目标，所提出的方法搜索可以满足约束的最佳结构。实验结果表明，当使用技术计算机辅助设计 (TCAD) 模拟进行评估时，从我们的优化框架获得的设计与所需规格的范围在 5% 范围内，这证明了所提出方法的效率。此外，我们提出的方法的效率反映在它的运行时间上，在超过 70% 的情况下不超过 10 分钟。我们相信这种建模方法可以大大加快设计人员对功率器件的设计探索过程。