An option for the structural design of the metamorphic InGaAs photovoltaic converter is presented. The peculiarity of the proposed device is the ability to operate efficiently with the high-power 1064 nm laser radiation at the elevated up to +125°C temperatures. The temperature dependencies of the output photovoltaic parameters for two types of In_xGa_1−xAs laser-power converters are presented in regard to In content: with x = 0.23 and x = 0.18 and with an efficiency of ~50% and ~40% (25 °C), respectively. For In_0.18Ga_0.82As device, an increase in efficiency of up to 50% is recorded upon transition to a temperature range of $50~\div ~60~^{\circ }\text{C}$ with maintaining efficiency at a level of more than 45% at elevated to 100 °C operating temperatures. In comparison, the “standard” In_0.23Ga_0.77As device performs a negative efficiency trend within a whole temperature range with absolute values below 45% in practically important operating modes of $+ 75\,\,\div \,\,100\,\,^{\circ }\text{C}$ .

中文翻译：

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激光功率转换器输出光伏参数的温度微调

提出了一种变质​​ InGaAs 光伏转换器的结构设计方案。所提出的设备的特点是能够在高达 +125°C 的高温下使用高功率 1064 nm 激光辐射高效运行。两种类型的 In _x Ga _1-x As 激光功率转换器的输出光伏参数的温度依赖性与 In 含量有关：x = 0.23 和 x = 0.18，效率为 ~50% 和 ~40 % (25 °C)，分别。对于 In _0.18 Ga _0.82 As 器件，转换到 50% 的温度范围后，效率提高了 50% $50~\div ~60~^{\circ }\text{C}$ 在升高到 100 °C 的工作温度下，将效率保持在 45% 以上的水平。相比之下，“标准” In _0.23 Ga _0.77 As 器件在整个温度范围内表现出负的效率趋势，在实际重要的工作模式下，绝对值低于 45% $+ 75\,\,\div \,\,100\,\,^{\circ }\text{C}$ .