Temperature (T) effects on MOSFET channel material benchmarking are explored using atomistic quantum and Monte Carlo simulation. Performance metrics such as OFF-current, maximum supply voltage (VDD,max), and effective inverter drive current (Ieff) for novel channel materials (InGaAs and Ge nMOS) are compared with those of Si nMOS at 27 °C vs. 101 °C. For novel channel materials, leakages from source-to-drain or band-to-band tunneling may become significant, while their T-dependence is much lower than in thermal leakage. This may have significant impact on the benchmarking analysis results, such as the increased VDD,max of novel channel materials at high T, which allows one to exploit the boosted Ieff in a wider range of supply voltage with leakage power still matching Si. This illustrates the importance of considering operating T's of actual circuits when assessing individual transistors, especially for novel channel materials.

中文翻译：

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温度对 MOSFET 沟道材料基准测试影响的计算研究


使用原子量子和蒙特卡罗模拟探讨了温度 (T) 对 MOSFET 沟道材料基准测试的影响。将新型沟道材料（InGaAs 和 Gen nMOS）的关断电流、最大电源电压 (VDD,max) 和有效逆变器驱动电流 (Ieff) 等性能指标与 Si nMOS 在 27 °C 和 101 °C 下的性能指标进行比较C.对于新型沟道材料，源极到漏极或带间隧道的泄漏可能会变得很大，而它们的 T 依赖性比热泄漏低得多。这可能会对基准分析结果产生重大影响，例如新型沟道材料在高 T 下增加 VDD,max，这使得人们能够在更宽的电源电压范围内利用提升的 Ieff，同时泄漏功率仍与 Si 匹配。这说明了在评估单个晶体管时考虑实际电路的操作 T 的重要性，特别是对于新型沟道材料。