An optimization principle for ferroelectric FET (FeFET), centered around charge matching between the ferroelectric and its underlying semiconductor, is theoretically investigated. This letter shows that, by properly reducing the ferroelectric polarization charge and its background dielectric constant, charge matching can be improved to enable simultaneously: i) reduction of the interlayer and semiconductor electric fields during programming, reading, and retention, leading to prolonged endurance and retention; ii) improvement of the memory window; and iii) suppression of device-to-device variations by affording full polarization switching. These attributes provide an incentive for the presentation of the proposed guidelines for FeFET optimization as detailed in this letter.

中文翻译：

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铁电 FET 可靠性优化指南：电荷匹配

理论上研究了铁电 FET (FeFET) 的优化原理，以铁电与其下层半导体之间的电荷匹配为中心。这封信表明，通过适当降低铁电极化电荷及其背景介电常数，可以改善电荷匹配，同时实现：i) 减少编程、读取和保持过程中的夹层和半导体电场，从而延长耐久性和保留; ii) 内存窗口的改进；iii) 通过提供全极化切换来抑制设备到设备的变化。这些属性为介绍 FeFET 优化的建议指南提供了动力，如本信函中详述的那样。