Hysteresis is a frequently observed phenomenon in the transfer characteristics of thin film transistors. Charge trapping/de-trapping processes of gate oxide and gate-channel interface are commonly known to be the origin of hysteresis and correlated to low frequency noise (LFN) properties of the devices. In this letter, a rapid four-point sweeping method (RFSM) is proposed to reveal the dependence of hysteresis, as well as the distribution of effective trap density on sweeping rate and gate bias range. Based on the RFSM, the hysteresis properties of four-layer MoS2 FETs are studied in detail. The experimental results demonstrate that the hysteresis and trap density at different frequencies and gate voltages, which could further roughly map the traps with different time constants and energy depths, can be obtained by the simple RFSM. Trap density estimated by RFSM shows a comparable range with that extracted from LFN, indicating that the traps inducing the hysteresis may also cause LFN.

中文翻译：

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研究 MoS2 FET 迟滞的快速四点扫描方法

迟滞是薄膜晶体管传输特性中经常观察到的现象。众所周知，栅极氧化物和栅极-沟道界面的电荷俘获/去俘获过程是滞后的起源，并且与器件的低频噪声 (LFN) 特性相关。在这封信中，提出了一种快速四点扫描方法 (RFSM) 来揭示滞后的依赖性，以及有效陷阱密度对扫描速率和栅极偏置范围的分布。基于RFSM，详细研究了四层MoS2 FET的滞后特性。实验结果表明，通过简单的 RFSM 可以获得不同频率和栅极电压下的滞后和陷阱密度，可以进一步粗略地绘制具有不同时间常数和能量深度的陷阱。