The effects of NH₃-plasma treating HfO₂ gate dielectric on electrical characteristics of top-gate (TG) MoS₂ FETs are investigated. The experimental results show that the increase of off-state current after growing HfO₂ top-gate dielectric can be considerably decreased by NH₃-plasma treating HfO₂, because the N incorporation from the NH₃-plasma treatment can effectively eliminate the oxygen vacancies and reduce the positive oxide charges in HfO₂. The fabricated TG MoS₂ FETs with the NH₃-plasma treated HfO₂ as gate dielectric achieve excellent electrical performances: high on–off ratio of $2.1 \times 107$ , high carrier mobility of 78~87 cm²/Vs and near-ideal subthreshold swing of 72mV/dec. Therefore, the NH₃-plasma treated HfO₂ as gate dielectric is highly beneficial for fabricating highperformance TG MoS₂ FETs.

中文翻译：

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用 NH3 等离子体处理过的 HfO2 作为栅极电介质改善顶栅 MoS2 晶体管的电性能

研究了NH _{3 -}等离子体处理HfO ₂栅极电介质对顶栅(TG) MoS ₂ FET的电特性的影响。实验结果表明，经过截止状态电流的增加生长的HfO ₂顶栅电介质可以由NH上被显着降低₃ -等离子体处理的HfO ₂，因为从NH N个掺入₃等离子体处理可以有效地消除氧空位并减少 HfO _{2 中}的正氧化物电荷。使用NH ₃等离子体处理的HfO ₂制造的TG MoS ₂ FET 作为栅极电介质实现优异的电气性能：高开关比 $2.1 \times 107$ , 78~87 cm ² /Vs 的高载流子迁移率和 72mV/dec 的接近理想的亚阈值摆幅。因此，NH ₃等离子体处理的HfO ₂作为栅极电介质对于制造高性能TG MoS ₂ FET非常有益。