We report the enhancement in the electrical performance of solution-processed amorphous InZnO ( $a$ -IZO) thin-film transistors (TFTs) through incorporation of low-temperature photosensitive polysilsesquioxane (P-PSQ) passivation. P-PSQ passivated TFTs recorded smaller ${V}_{th}$ shift of 1.5 V after positive bias stress test despite annealing at 180°C. Analysis of secondary ion mass spectrometry and x-ray photoelectron spectroscopy showed that higher concentration of hydrogen reduced the amount of oxygen vacancies in the passivated IZO channel which promotes better stability against bias stress. Also, the time evolution of the ${V}_{th}$ was defined in which the activation energy for each sample was extracted. Passivated TFT also showed minimal change upon exposure to humidity test. Overall, low-temperature P-PSQ passivation is an effective barrier against atmospheric effects for solution-processed oxide TFTs.

中文翻译：

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通过低温光敏钝化提高溶液处理非晶 InZnO 薄膜晶体管的偏置应力稳定性

我们报告了溶液处理的非晶 InZnO 电性能的增强（ $a$ -IZO) 薄膜晶体管 (TFT) 通过结合低温光敏聚倍半硅氧烷 (P-PSQ) 钝化。P-PSQ 钝化 TFT 记录更小 ${V}_{th}$ 尽管在 180°C 下退火，但在正偏置应力测试后仍会发生 1.5 V 的偏移。二次离子质谱分析和 X 射线光电子能谱分析表明，较高浓度的氢减少了钝化 IZO 通道中的氧空位数量，从而提高了对偏置应力的稳定性。此外，随着时代的发展 ${V}_{th}$ 定义了其中提取每个样品的活化能。钝化的 TFT 在暴露于湿度测试时也显示出最小的变化。总体而言，低温 P-PSQ 钝化是溶液处理氧化物 TFT 抵御大气效应的有效屏障。