In conventional quantum dot light-emitting diodes (QLEDs), the organic charge transport materials are susceptible to erosion by water and oxygen, which would reduce the efficiency and lifetime of the devices. Herein, we modified the surface of the organic hole transport layer with an ultra-thin Al2O3 layer, which is deposited by using atomic layer deposition technique, to obtain the highly efficient and stable QLEDs. It is indicated that the ultra-thin Al2O3 interlayer plays a significant role in decreasing leakage current, suppressing exciton quenching and passivating the defects. The device with Al2O3 interface modification exhibits the maximum external quantum efficiency (EQE) of 20.8%, current efficiency (CE) of 21.6 cd A-1, and lifetime of 482000 h. In comparison with the control device, the EQE, CE and lifetime are improved by 31%, 32%, and 330%, respectively. The results indicate that the strategy of Al2O3 interface modification could provide an effective way for realizing highly efficiency QLED with long lifetime.

中文翻译：

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通过界面修饰实现高效稳定的量子点发光二极管


在传统的量子点发光二极管（QLED）中，有机电荷传输材料容易受到水和氧气的侵蚀，这会降低器件的效率和寿命。在此，我们利用原子层沉积技术沉积的超薄Al2O3层对有机空穴传输层的表面进行修饰，以获得高效稳定的QLED。表明超薄Al2O3中间层对于降低漏电流、抑制激子猝灭、钝化缺陷等具有重要作用。经过Al2O3界面修饰的器件的最大外量子效率（EQE）为20.8%，电流效率（CE）为21.6 cd A-1，寿命为482000 h。与控制装置相比，EQE、CE和寿命分别提高了31%、32%和330%。结果表明，Al2O3界面修饰策略可以为实现高效率、长寿命的QLED提供有效途径。