The dynamically active synaptic elements are the fundamental building blocks in neuromorphic systems towards artificial intelligence with computing and sensing capabilities. Here, a two-dimensional (2D) MoS2 synaptic transistor is fabricated by using poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as a laterally coupled ion-conducting electrolyte. Due to the strong electric double layer (EDL) effect, a low operating voltage of 1 V and a high current on/off ratio of 105 have been obtained. In addition, short-term and long-term plasticity of typical synaptic behaviors have been successfully simulated, such as excitatory postsynaptic current, paired pulse facilitation long-term potentiation, long-term depression, and dynamic filtering. These results can provide new opportunities and strategies in building hybrid and low-dimensional neuromorphic systems for future artificial intelligence applications.

中文翻译：

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具有离子门控的横向耦合 2D MoS2 突触晶体管


动态活跃的突触元件是神经形态系统中具有计算和传感能力的人工智能的基本构建模块。这里，通过使用聚环氧乙烷（PEO）和高氯酸锂（LiClO4）作为横向耦合离子传导电解质来制造二维（2D）MoS2突触晶体管。由于强双电层（EDL）效应，获得了1V的低工作电压和105的高电流开/关比。此外，还成功模拟了典型突触行为的短期和长期可塑性，例如兴奋性突触后电流、配对脉冲促进长期增强、长期抑制和动态过滤。这些结果可以为未来人工智能应用构建混合和低维神经形态系统提供新的机会和策略。