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Artificial Nociceptor Using 2D MoS2 Threshold Switching Memristor
IEEE Electron Device Letters ( IF 4.1 ) Pub Date : 2020-09-01 , DOI: 10.1109/led.2020.3012831
Durjoy Dev , Mashiyat S. Shawkat , Adithi Krishnaprasad , Yeonwoong Jung , Tania Roy

An artificial nociceptor realized with a single 2D MoS2-based memristor device is demonstrated in this work. The threshold switching memristor (TSM) device exhibits volatile resistance switching characteristics with low threshold voltage and a high ON-OFF ratio of 106. The Au/MoS2/Ag TSM device imitates a nociceptor, a special receptor of a sensory neuron that can detect noxious stimulus and transfer the signal to the central nervous system for preventive actions. The single device exhibits all key features of nociceptors including threshold, relaxation, “no adaptation” and sensitization phenomena of allodynia and hyperalgesia depending on the strength, duration, and repetition of the external stimuli. This work indicates applicability of this device in artificial sensory alarm systems for humanoid robots.

中文翻译:

使用 2D MoS2 阈值开关忆阻器的人工伤害感受器

在这项工作中展示了用单个基于 2D MoS2 的忆阻器装置实现的人工伤害感受器。阈值开关忆阻器 (TSM) 器件具有易失性电阻开关特性,具有低阈值电压和 106 的高 ON-OFF 比。 Au/MoS2/Ag TSM 器件模仿伤害感受器,这是感觉神经元的一种特殊受体,可以检测有害物质。刺激并将信号传递到中枢神经系统以采取预防措施。单个设备展示了伤害感受器的所有关键特征,包括阈值、松弛、“无适应”以及异常性疼痛和痛觉过敏的敏化现象,具体取决于外部刺激的强度、持续时间和重复。这项工作表明该设备在仿人机器人的人工传感报警系统中的适用性。
更新日期:2020-09-01
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