The influences of doping amounts of TiO2 on the structure and electrical properties of In2O3 films were experimentally studied. In this study, titanium-doped indium oxide (ITiO) conductions were deposited on glass substrate by the dual-target-type radio frequency magnetron sputtering (RFS) system under different conditions of Ti-doped In2O3 targets, from Ti-0.5 wt% to Ti-5.0 wt%, along with 10 mTorr and 300 W pressure of RF power control that was used as a cost-effective transparent electrochemiluminescence (ECL) cell. From this process, the correlation between structural, optical, and electrical properties is reported. It was found that the best Ω cm of resistivity was from Ti-2.5 wt% with the highest carrier concentration (1.15 × 1021 cm-3), Hall mobility (46.03 cm2/V·s), relatively transmittance (82%), and ECL efficiency (0.43 lm·W-1) with well crystalline structured and smooth morphology. As a result, researchers can be responsible for preparing ITiO thin films with significantly improved microstructure and light intensity performance for the effectiveness of the display devices, as well as its simple process and high performance.

中文翻译：

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使用射频磁控溅射制备不同掺杂浓度的 Ti 掺杂 In2O3 薄膜用于发光器件的性能分析

实验研究了TiO2掺杂量对In2O3薄膜结构和电学性能的影响。在这项研究中，在掺钛 In2O3 靶材的不同条件下，钛掺杂氧化铟 (ITiO) 导电体通过双靶型射频磁控溅射 (RFS) 系统沉积在玻璃基板上，从 Ti-0.5 wt% 到Ti-5.0 wt%，以及 10 mTorr 和 300 W 压力的射频功率控制，用作具有成本效益的透明电化学发光 (ECL) 电池。从这个过程中，报告了结构、光学和电学特性之间的相关性。结果表明，电阻率的最佳 Ω cm 来自 Ti-2.5 wt%，载流子浓度最高 (1.15 × 1021 cm-3)、霍尔迁移率 (46.03 cm2/V·s)、相对透射率 (82%) 和ECL 效率 (0. 43 lm·W-1) 具有良好的结晶结构和光滑的形态。因此，研究人员可以负责制备具有显着改善的微观结构和光强度性能的 ITiO 薄膜，以提高显示设备的有效性，以及其简单的工艺和高性能。