Tin oxide (SnO_x) has been widely used for the fabrication of transparent and flexible devices because of its excellent optical and electronic properties. In this work, we established a methodology for the synthesis of SnO_x thin films with p‐type and n‐type tunable conductivity by direct currecnt (DC) magnetron sputtering. The SnO_x thin films changed from p‐type to n‐type by increasing the relative oxygen partial pressure (ppO₂) from 4.8% to 18.5% and by varying the working pressure between 1.8 and 2.5 mTorr. The SnO_x thin films were annealed at 160°C, 180°C, and 200°C for 30 min to promote the formation of the desired crystalline structures. At the annealing temperature of 180°C in air ambient, the SnO_x thin films showed a tetragonal structure with Sn traces. Having found the optimal conditions, we deposited both types of SnO_x thin films with the same tetragonal structure and similar chemical stoichiometry. Also, the conditions to obtain thin films with the highest mobility values for p‐type (1.10 cm²/Vs) and n‐type (22.20 cm²/Vs) were used for fabricating the device. Finally, the implementation of a SnO_x‐based p–n diode was demonstrated using transparent SnO_x thin films developed in this work, illustrating their potential use in transparent electronics.

中文翻译：

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具有可调电导率的SnOx薄膜用于制造p–n同质结

氧化锡（SnO _x）由于其优异的光学和电子性能，已被广泛用于透明和柔性设备的制造中。在这项工作中，我们建立了一种通过直接电流（DC）磁控管溅射合成具有p型和n型可调电导率的SnO _x薄膜的方法。通过将相对氧分压（ppO ₂）从4.8％增加到18.5％，以及在1.8至2.5 mTorr之间改变工作压力，SnO _x薄膜从p型变为n型。SnO _x薄膜在160°C，180°C和200°C退火30分钟以促进所需晶体结构的形成。在空气中退火温度为180°C时，SnO_x薄膜显示具有Sn痕迹的四边形结构。找到最佳条件后，我们沉积了具有相同四边形结构和相似化学计量的两种SnO _x薄膜。同样，使用获得p型（1.10 cm ² / Vs）和n型（22.20 cm ² / Vs）最高迁移率值的薄膜的条件来制造器件。最后，使用在这项工作中开发的透明SnO _x薄膜演示了基于SnO _x的p–n二极管的实现，说明了它们在透明电子产品中的潜在用途。