In this paper, a continuous wave (CW) and two-dimensional (2D) tin diselenide (SnSe₂) and palladium diselenide (PdSe₂) passively Q-switched Nd:GdNbO₄ laser under direct pumping was demonstrated for the first time. The CW laser performance under the pump at 879 nm was compared to that using traditional 808 nm pumping. The 2D SnSe₂ and PdSe₂ nanosheets were synthesized by chemical vapor deposition (CVD) technique. The optical properties and microstructures of two nanosheets were investigated. In the passively Q-switched operation, the highest repetition rate, narrowest pulse width, maximum pulse energy and peak power of SnSe₂/Nd:GdNbO₄ laser were 160 kHz, 555 ns, 2.3 μJ and 4.2 W, respectively. And for PdSe₂/Nd:GdNbO₄ laser, the corresponding values were 143 kHz, 530 ns, 3.7 μJ and 7.0 W, respectively.

本文首次对直接泵浦下的连续波（CW）和二维（2D）二硒化锡（SnSe ₂）和二硒化钯（PdSe ₂）被动调Q开关Nd：GdNbO ₄激光器进行了首次演示。将泵浦下879 nm处的连续波激光器性能与传统808 nm泵浦下的CW激光器性能进行了比较。通过化学气相沉积（CVD）技术合成了2D SnSe ₂和PdSe ₂纳米片。研究了两个纳米片的光学性质和微观结构。在被动调Q操作中，SnSe ₂ / Nd：GdNbO ₄的最高重复率，最窄的脉冲宽度，最大的脉冲能量和峰值功率激光分别为160 kHz，555 ns，2.3μJ和4.2 W. 对于PdSe ₂ / Nd：GdNbO ₄激光器，相应的值分别为143 kHz，530 ns，3.7μJ和7.0W 。