Abstract Photoluminescent (PL) layers and electroluminescent (EL) systems prepared by different methods have been systematically studied for the fabrication of flat panel displays, monitoring screens, and lighting systems. In this work we report about a new procedure of preparing Tb doped ZnGa2O4 green luminescent thin films at low temperature that consists of the simultaneous reactive magnetron sputtering (R-MS) deposition of a Zn–Ga mixed oxide acting as a matrix and the plasma decomposition (PD) of evaporated terbium acetylacetonate. The resulting films were transparent and presented a high PL efficiency making them good candidates for EL applications. Layers of this phosphor film with thickness in the order of hundreds nanometers were sandwiched between two dielectric layers of Y2O3 and AlSiNxOy that were also prepared by R-MS. The response of the resulting EL device was characterized as a function of the applied voltage and the type of AC excitation signal. The high luminance and long-term stability of these thin film electroluminescent devices (TFELDs) proves the reliability and efficiency of this kind of transparent R-MS multilayer system (with a total thickness in order of 650 nm) for display and lighting applications.

中文翻译：

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基于磁控溅射 Tb 掺杂 ZnGa2O4 层的薄膜电致发光器件

摘要 已经系统地研究了通过不同方法制备的光致发光 (PL) 层和电致发光 (EL) 系统，用于制造平板显示器、监控屏幕和照明系统。在这项工作中，我们报告了一种在低温下制备 Tb 掺杂的 ZnGa2O4 绿色发光薄膜的新程序，该程序包括同时反应磁控溅射 (R-MS) 沉积作为基体的 Zn-Ga 混合氧化物和等离子体分解(PD) 蒸发的乙酰丙酮铽。所得薄膜是透明的，并具有高 PL 效率，使其成为 EL 应用的良好候选者。这种厚度为数百纳米的磷光体膜层夹在两个同样由 R-MS 制备的 Y2O3 和 AlSiNxOy 介电层之间。所得 EL 器件的响应被表征为所施加电压和 AC 激励信号类型的函数。这些薄膜电致发光器件 (TFELD) 的高亮度和长期稳定性证明了这种用于显示和照明应用的透明 R-MS 多层系统（总厚度约为 650 nm）的可靠性和效率。