Abstract Molybdenum dioxide (MoO2), which exhibits both high chemical stability and high electrical conductivity, has been studied for various applications, e.g. as a photocatalyst, an active material for secondary batteries, and the capacitor electrode of dynamic random access memory devices. MoO2 films are mainly fabricated by vacuum processes, which incur a high manufacturing cost. In this study, we fabricated MoO2 thin films by mist chemical vapor deposition. Since this method does not require vacuum or a volatile precursor, the processing cost is reduced. Examination of the films deposited at various positions in the furnace at different furnace temperatures revealed that smooth MoO2 films composed of densely packed crystal grains with a constant thickness of 200 nm can be obtained over a wide area of >30 cm2 at a furnace temperature of ~480 °C. The films showed low electrical resistivity of 2 × 10−3 Ω cm. Thus, this study provides a low-cost method for the fabrication of MoO2 thin films.

中文翻译：

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MoO2薄膜的雾化化学气相沉积

摘要 二氧化钼 (MoO2) 具有高化学稳定性和高导电性，已被研究用于各种应用，例如作为光催化剂、二次电池的活性材料和动态随机存取存储器件的电容器电极。MoO2 薄膜主要采用真空工艺制造，制造成本高。在这项研究中，我们通过雾化学气相沉积制造了 MoO2 薄膜。由于该方法不需要真空或挥发性前体，因此降低了加工成本。在不同炉温下对炉内不同位置沉积的薄膜进行检查表明，可以在大范围内获得由密度为 200 nm 的致密晶粒组成的光滑 MoO2 薄膜 > 30 cm2，炉温约 480 °C。薄膜显示出 2 × 10−3 Ω cm 的低电阻率。因此，本研究为制备 MoO2 薄膜提供了一种低成本的方法。