Flyback topologies have advantages in terms of low cost, fewer electrical components, and simple circuit design. Semiconductor devices in the primary and secondary sides are regarded as major EMI noise sources in EMI propagation paths. However, the same transformers under different circuit configurations can bring different noise cancellation effects due to a change of the electric potential distribution in transformer windings as well as the phases of the EMI noise sources in the primary and secondary sides. In this paper, a CM noise cancellation mechanism is investigated. In addition, a flyback topology with high side gate driving in the primary side is proposed to form a CM noise cancellation mechanism. Based on the proposed flyback topology, the capacitor compensation cancellation technique can be applied to lower the electromagnetic interference (EMI) noise level of the designed converter. Finally, the experimental noise spectrums are used to verify the effectiveness of the proposed flyback circuit configuration scheme.

中文翻译：

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用于 CM 噪声消除的高侧反激电路配置

反激式拓扑在成本低、电气元件少、电路设计简单等方面具有优势。初级和次级侧的半导体器件被视为 EMI 传播路径中的主要 EMI 噪声源。但是，同一变压器在不同的电路配置下，由于变压器绕组中电位分布的变化以及初级和次级侧EMI噪声源的相位发生变化，会带来不同的噪声消除效果。在本文中，研究了CM噪声消除机制。此外，还提出了在初级侧具有高侧栅极驱动的反激拓扑，以形成 CM 噪声消除机制。基于所提出的反激拓扑，电容补偿抵消技术可用于降低设计转换器的电磁干扰 (EMI) 噪声水平。最后，实验噪声频谱用于验证所提出的反激电路配置方案的有效性。