Abstract

Silicon carbide was irradiated with aluminum ions at an energy of 190 keV with fluences of \(2\times 10^{13}{-}5\times 10^{14}\) ion/cm\({}^{2}\). The temperature of the target during irradiation was 300–500\({}^{\circ}\)C or it was kept at room temperature. It is shown that the presence of nitrogen in the structure of silicon carbide erodes the edge of the interband absorption. After irradiation at room temperature, the structure is disordered to form Si–Si and C–C compounds, as well as 3C–SiC. According to the absorption spectra, when the target temperature is increased during irradiation to 500\({}^{\circ}\)C, the structure of silicon carbide recrystallizes up to the initial state.

中文翻译：

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离子辐照下碳化硅结构的重结晶

摘要

碳化硅在190千电子伏的能量与铝离子照射的能量密度\（2 \倍10 ^ {13} { - } 5 \倍10 ^ {14} \）离子/厘米\（{} ^ {2} \）。目标的照射时的温度是300-500 \（{} ^ {\ CIRC} \） C或它保持在室温。结果表明，碳化硅结构中氮的存在侵蚀了带间吸收的边缘。在室温下照射后，该结构无序形成Si–Si和C–C化合物以及3C–SiC。根据吸收光谱，当在辐照期间将目标温度升高到500 （ C时，碳化硅的结构会重结晶到初始状态。