Crystal warpage and swelling of implanted 4H-SiC with both un-implanted and implanted regions on the surface were investigated using a white-light interferometer. In the SiC samples with an implantation temperature of approximately 30 °C, the warpage was small and the step at the un-implanted/implanted interface for swelling was large. In contrast, the SiC samples with implantation temperatures of over 300 °C had a large warpage and a small interface step. In the x-ray topographs, no diffraction at the interface was observed in the SiC implanted at a low temperature; however, the SiC implanted at a high temperature exhibited diffraction at the interface. Diffraction at the interface is evidence of lattice bonding between the un-implanted and implanted regions. The interfacial lattice bonding can consistently explain the correlation between the crystal warpage and the swelling of the implanted SiC. After the annealing, crystal recovery developed and the warpage and swelling retur...

中文翻译：

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通过注入和退火使晶体翘曲与4H-SiC溶胀之间的相关性

使用白光干涉仪研究了在表面上有未植入和已植入区域的植入的4H-SiC的晶体翘曲和溶胀。在注入温度大约为30°C的SiC样品中，翘曲很小，并且在未注入/注入界面处的溶胀步长很大。相反，注入温度超过300°C的SiC样品具有较大的翘曲和较小的界面台阶。在X射线形貌图中，在低温下注入的SiC中未观察到界面衍射。但是，高温注入的SiC在界面处显示出衍射。界面处的衍射是未植入和植入区域之间晶格键合的证据。界面晶格键合可以一致地解释晶体翘曲和注入的SiC溶胀之间的相关性。退火后，晶体恢复发展，翘曲和溶胀回缩。