Gallium nitride (GaN) is exceedingly apposite for liquid-based sensor applications because of their high internal piezoelectric polarization, chemical and high temperature stability. In this work, the interaction between GaN and H 2 O has been investigated using a novel methodology. We report the fabrication of single crystal GaN lamella with thickness of few hundreds of nanometer using focused ion-beam milling technique, for sensing applications. Results signify that the device resistivity increases with time at room temperature during the GaN-H 2 O interaction. Such a change in electrical resistivity is explained based on the electron transfer and electrochemical reactions at the surface of GaN. Study of the surface chemistry transformation of the tested GaN lamella is conducted using high-angle annular dark-field scanning transmission electron microscopy coupled with electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS) tech...

中文翻译：

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纳米GaN薄片结构研究氮化镓表面与H 2 O的相互作用。

氮化镓（GaN）具有很高的内部压电极化，化学稳定性和高温稳定性，因此非常适合用于液体传感器。在这项工作中，已经使用一种新颖的方法研究了GaN与H 2 O之间的相互作用。我们报告了使用聚焦离子束铣削技术制造厚度达数百纳米的单晶GaN薄片，用于传感应用的情况。结果表明在GaN-H 2 O相互作用期间，器件电阻率在室温下随时间增加。电阻率的这种变化是根据GaN表面的电子转移和电化学反应来解释的。