We used depth-resolved cathodoluminescence spectroscopy (DRCLS), absorption spectroscopy, and temperature-dependent Hall effect (TDH) measurements to study the effects of fluence dependent neutron irradiations on deep level defects and the associated changes of electrical properties of β-Ga 2 O 3 grown by low pressure chemical vapor deposition and pulsed laser deposition. DRCLS enabled us to monitor systematic increases of three deep level defects after neutron irradiation which correlated with TDH measurements of significant free carrier removal and mobility decrease. The correlations between defect profiles and electrical property changes vs. irradiation dose link these dominant electrically active native point defects in Ga 2 O 3 with their contributions to free carrier mobility, carrier density, and donor/acceptor depth profiles, further revealing their donor/acceptor electrical behavior and physical nature, consistent with the formation...

中文翻译：

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中子辐照和气体退火对β-Ga2 O 3深层缺陷的影响

我们使用深度分辨阴极荧光光谱法（DRCLS），吸收光谱法和温度依赖性霍尔效应（TDH）测量来研究依赖注量的中子辐照对深能级缺陷以及β-Ga2 O电学性质相关变化的影响通过低压化学气相沉积和脉冲激光沉积生长的3。DRCLS使我们能够监测中子辐照后三个深能级缺陷的系统增加，这与TDH测得的自由载流子去除和迁移率显着降低有关。缺陷分布与电性能变化与辐射剂量之间的相关性将Ga 2 O 3中这些主要的电活性本征点缺陷与它们对自由载流子迁移率，载流子密度和施主/受主深度分布的贡献联系在一起，