In this letter, an anode configuration with multi-aperture structure and fully recessed AlGaN barrier layer is proposed in the AlGaN/GaN Schottky barrier diode. With the Schottky junction formed between the Ni anode metal and the channel of two-dimensional electron gas, as well as the evidently enlarged contact profile by the introduction of multiple apertures, the device’s forward turning-on performances are dominated by the sidewall Schottky contact, achieving a low turn on voltage of 0.35 V with high uniformity. Accompanied with the high breakdown voltage of 2770 V, the diode achieved a power figure-of-merit as high as 1.1 GW cm −2 .

中文翻译：

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具有低导通电压和高均匀性的基于多孔阳极的AlGaN / GaN肖特基势垒二极管

在这封信中，在AlGaN / GaN肖特基势垒二极管中提出了一种具有多孔径结构和完全凹陷的AlGaN势垒层的阳极配置。由于在Ni阳极金属和二维电子气通道之间形成了肖特基结，并且由于引入了多个孔而明显扩大了接触轮廓，因此器件的正向导通性能主要由侧壁肖特基接触决定，实现了0.35 V的低导通电压和高均匀性。伴随着2770 V的高击穿电压，该二极管实现了高达1.1 GW cm -2的功率品质因数。