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One-Pot Selective Epitaxial Growth of Large WS2/MoS2 Lateral and Vertical Heterostructures
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2020-08-27 , DOI: 10.1021/jacs.0c05691 Juntong Zhu 1 , Wei Li 1 , Rong Huang 2 , Liang Ma 1 , Haiming Sun 3 , Jin-Ho Choi 1 , Liqiang Zhang 3 , Yi Cui 2 , Guifu Zou 1
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2020-08-27 , DOI: 10.1021/jacs.0c05691 Juntong Zhu 1 , Wei Li 1 , Rong Huang 2 , Liang Ma 1 , Haiming Sun 3 , Jin-Ho Choi 1 , Liqiang Zhang 3 , Yi Cui 2 , Guifu Zou 1
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Controllable nucleation sites play a key role in the selective growth of heterostructures. Here, we are the first to report a one-pot strategy to realize the confined and selective growth of large MoS2/WS2 lateral and vertical heterostructures. A hydroxide-assisted process is introduced to control the nucleation sites, thereby realizing the optional formation of lateral and vertical heterostructures. Time-of-flight secondary ion mass spectrometry verifies the critical role of hydroxide groups toward the controllable growth of these heterostructures. The size of the as-grown MoS2/WS2 lateral heterostructures can be as large as 1 mm, which is the largest lateral size reported thus far. The obtained MoS2/WS2 heterostructures have a high carrier mobility of ~ 58 cm2 V-1 s-1, and the maximum on/off current ratio is > 10^8. This approach provides not only a pathway for the selective growth of large MoS2/WS2 lateral and vertical heterostructures but also a fundamental understanding of surface chemistry for controlling the selective growth of transition-metal dichalcogenide heterostructures.
中文翻译：
大型 WS2/MoS2 横向和纵向异质结构的一锅法选择性外延生长
可控的成核位点在异质结构的选择性生长中起着关键作用。在这里，我们是第一个报告实现大型 MoS2/WS2 横向和垂直异质结构的受限和选择性生长的单锅策略。引入氢氧化物辅助过程来控制成核位点，从而实现横向和纵向异质结构的可选形成。飞行时间二次离子质谱验证了羟基对这些异质结构可控生长的关键作用。生长的 MoS2/WS2 横向异质结构的尺寸可达 1 mm，这是迄今为止报道的最大横向尺寸。获得的 MoS2/WS2 异质结构具有~58 cm2 V-1 s-1 的高载流子迁移率，最大开/关电流比 > 10^8。
更新日期：2020-08-27
中文翻译：
大型 WS2/MoS2 横向和纵向异质结构的一锅法选择性外延生长
可控的成核位点在异质结构的选择性生长中起着关键作用。在这里，我们是第一个报告实现大型 MoS2/WS2 横向和垂直异质结构的受限和选择性生长的单锅策略。引入氢氧化物辅助过程来控制成核位点，从而实现横向和纵向异质结构的可选形成。飞行时间二次离子质谱验证了羟基对这些异质结构可控生长的关键作用。生长的 MoS2/WS2 横向异质结构的尺寸可达 1 mm，这是迄今为止报道的最大横向尺寸。获得的 MoS2/WS2 异质结构具有~58 cm2 V-1 s-1 的高载流子迁移率，最大开/关电流比 > 10^8。
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