N-type heavy doping and tensile strain can significantly improve the luminescence efficiency of Ge materials. The active region of the quantum dot(QD) structure can realize high luminous efficiency due to its 3D carrier confinement. In this study, we constructed a Si-based QD array laser by introducing a 0.25% biaxial tensile strain and N type heavy doping to Ge. A band-lifting method was proposed to determine the optimum doping concentration and thus improve the luminescence efficiency of Ge. To obtain accurate characteristics of the laser, we constructed a calculation model of three band transitions and all of the k-space quantum transitions of Ge and other relevant modified models. Results showed that the laser power was at a voltage of 2.5 V, and the laser wavelength reached 1519.4 nm at room temperature. The proposed laser can be used as a light source compatible with the Si-based CMOS process.

中文翻译：

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室温 1550 nm 激光从 Si 上的拉伸应变 N 掺杂 Ge 量子点

N型重掺杂和拉伸应变可以显着提高Ge材料的发光效率。量子点（QD）结构的有源区由于其3D载流子限制可以实现高发光效率。在这项研究中，我们通过向 Ge 引入 0.25% 双轴拉伸应变和 N 型重掺杂来构建基于 Si 的 QD 阵列激光器。提出了一种能带提升方法来确定最佳掺杂浓度，从而提高Ge的发光效率。为了获得准确的激光器特性，我们构建了Ge的三能带跃迁和所有k空间量子跃迁的计算模型以及其他相关的修正模型。结果表明，激光功率为2.5 V电压，室温下激光波长达到1519.4 nm。