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Diamond p–i–n Diode with Nitrogen Containing Intrinsic Region for the Study of Nitrogen‐Vacancy Center Electroluminescence
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-08-26 , DOI: 10.1002/pssr.202000347 Mikhail Aleksandrovich Lobaev 1 , Dmitry Borisovich Radishev 1 , Sergey Aleksandrovich Bog-danov 1 , Anatoly Leontievich Vikharev 1 , Alexey Mikhailovich Gorbachev 1 , Vladimir Aleksandrovich Isaev 1 , Stanislav Alekseevich Kraev 2 , . Andrey Igorevich Okhapkin 2 , Ekaterina Aleksandrovna Arhipova 2 , Mikhail Nikolaevich Drozdov 2 , Vladimir Ivanovich Shashkin 2
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-08-26 , DOI: 10.1002/pssr.202000347 Mikhail Aleksandrovich Lobaev 1 , Dmitry Borisovich Radishev 1 , Sergey Aleksandrovich Bog-danov 1 , Anatoly Leontievich Vikharev 1 , Alexey Mikhailovich Gorbachev 1 , Vladimir Aleksandrovich Isaev 1 , Stanislav Alekseevich Kraev 2 , . Andrey Igorevich Okhapkin 2 , Ekaterina Aleksandrovna Arhipova 2 , Mikhail Nikolaevich Drozdov 2 , Vladimir Ivanovich Shashkin 2
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The results of a study of diamond p–i–n diode with a nitrogen‐doped intrinsic region on a substrate with the (001) orientation are presented. When the forward voltage is applied to the diode, a high current density of about 103 A cm−2 is obtained. Two narrow lines are detected in the electroluminescence spectrum of the p–i–n diode: one at a wavelength of 575 nm corresponding to the emission of the NV center (nitrogen‐vacancy color center) in a neutral charge state, and the second narrow line, which previously has not been observed in the electroluminescence spectra, at a wavelength of 533 nm. The line widths at room temperature are about 7 and 3 nm, respectively. By comparing the emission intensities of NV centers using the same optical registration system for electroluminescence and photoluminescence, the emission rate of NV centers during electroluminescence is estimated to be about 106 photon s−1, which allows to consider a diode of such design as a possible candidate to create single‐photon sources.
中文翻译：
含氮本征区的金刚石p–i–n二极管用于研究空位中心电致发光
提出了对金刚石（p–i–n）二极管进行研究的结果，该二极管在衬底上具有（001）取向的氮掺杂本征区。当向二极管施加正向电压时，大约10 3 A cm -2的高电流密度获得。在p–i–n二极管的电致发光光谱中检测到两条窄线：一条在575 nm波长处，对应于中性电荷状态下NV中心（氮空位色中心）的发射，第二条窄线以前在电致发光光谱中未观察到的波长为533 nm的谱线。室温下的线宽分别约为7和3nm。通过比较使用相同光学配准系统进行电致发光和光致发光的NV中心的发射强度，估计在电致发光期间NV中心的发射速率约为10 6光子s -1，这可以将这种设计的二极管视为可能创建单光子源。
更新日期：2020-11-02
中文翻译：
含氮本征区的金刚石p–i–n二极管用于研究空位中心电致发光
提出了对金刚石（p–i–n）二极管进行研究的结果，该二极管在衬底上具有（001）取向的氮掺杂本征区。当向二极管施加正向电压时，大约10 3 A cm -2的高电流密度获得。在p–i–n二极管的电致发光光谱中检测到两条窄线：一条在575 nm波长处，对应于中性电荷状态下NV中心（氮空位色中心）的发射，第二条窄线以前在电致发光光谱中未观察到的波长为533 nm的谱线。室温下的线宽分别约为7和3nm。通过比较使用相同光学配准系统进行电致发光和光致发光的NV中心的发射强度，估计在电致发光期间NV中心的发射速率约为10 6光子s -1，这可以将这种设计的二极管视为可能创建单光子源。
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