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MoS2 /Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness.
Advanced Materials ( IF 27.4 ) Pub Date : 2020-08-26 , DOI: 10.1002/adma.202002704
Jianwei Chai 1 , Shiwun Tong 1 , Changjian Li 2 , Carlos Manzano 1 , Bing Li 1 , Yanpeng Liu 3 , Ming Lin 1 , Laimun Wong 1 , Jianwei Cheng 1 , Jing Wu 1 , Aaron Lau 1 , Qidong Xie 2 , Stephen J Pennycook 2 , Henry Medina 1 , Ming Yang 1 , Shijie Wang 1 , Dongzhi Chi 1
Affiliation  

Resistive random‐access memories (ReRAMs) based on transition metal dichalcogenide layers are promising physical sources for random number generation (RNG). However, most ReRAM devices undergo performance degradation from cycle to cycle, which makes preserving a normal probability distribution during operation a challenging task. Here, ReRAM devices with excellent stability are reported by using a MoS2/polymer heterostructure as active layer. The stability enhancement manifests in outstanding cumulative probabilities for both high‐ and low‐resistivity states of the memory cells. Moreover, the intrinsic values of the high‐resistivity state are found to be an excellent source of randomness as suggested by a Chi‐square test. It is demonstrated that one of these cells alone can generate ten distinct random states, in contrast to the four conventional binary cells that would be required for an equivalent number of states. This work unravels a scalable interface engineering process for the production of high‐performance ReRAM devices, and sheds light on their promising application as reliable RNGs for enhanced cybersecurity in the big data era.

中文翻译:

MoS2 /聚合物异质结构,可实现稳定的电阻转换和多态随机性。

基于过渡金属二硫属化物层的电阻式随机存取存储器(ReRAM)是产生随机数(RNG)的有希望的物理来源。但是,大多数ReRAM器件的性能会逐周期下降,这使得在操作过程中保持正常的概率分布成为一项艰巨的任务。在这里,通过使用MoS 2报告了具有出色稳定性的ReRAM器件/聚合物异质结构作为活性层。稳定性的提高表现为存储单元的高电阻率状态和低电阻率状态均具有出色的累积概率。此外,卡方检验表明,高电阻率状态的内在值是一个很好的随机性来源。事实证明,与等价数量的状态需要的四个常规二元单元相比,这些单元中的一个可以单独产生十个不同的随机状态。这项工作阐明了用于生产高性能ReRAM器件的可扩展接口工程流程,并阐明了它们作为可靠的RNG的有前途的应用,以在大数据时代增强网络安全性。
更新日期:2020-10-20
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