Abstract Al doped zinc oxide (AZO) thin films are attempted to be formed on glass substrates via solution processing with 0, 0.5, 1, 2, 3, and 4 at% Al doping concentrations. Analysis of X-ray diffraction patterns and scanning electron microscopy micrographs indicate that the AZO thin films belong to the wurtzite hexagonal structure with (100), (002), (101), (102), (110), (103), (112) and (201) orientations, and show that the grain size of AZO thin films decreases with higher Al doping concentrations. Optical and electrical properties of the AZO thin films are characterized from using a UV/vis spectrometer and a four-probe measurement system, respectively. The AZO thin films obtained have a minimum sheet resistance of 30.41 Ω/sq for the dopant concentration of 1 at%, and a bandgap energy varying from 3.26 eV to 3.16 eV as the Al doping concentration increases from 0 to 4 at%. The maximum figure of merit value of 7.48 × 10−3 (Ω/sq)−1 corresponds to the deposition of the AZO thin film with 2 at% Al doping.

中文翻译：

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具有不同铝掺杂浓度的可溶液加工氧化锌基薄膜

摘要 尝试通过溶液处理以 0、0.5、1、2、3 和 4 at% 的 Al 掺杂浓度在玻璃基板上形成 Al 掺杂的氧化锌 (AZO) 薄膜。X射线衍射图和扫描电镜显微照片分析表明，AZO薄膜属于纤锌矿六方结构，具有（100）、（002）、（101）、（102）、（110）、（103）、（ 112）和（201）取向，并表明AZO薄膜的晶粒尺寸随着Al掺杂浓度的增加而减小。AZO 薄膜的光学和电学特性分别通过使用紫外/可见光谱仪和四探针测量系统进行表征。对于 1 at% 的掺杂浓度，获得的 AZO 薄膜的最小薄层电阻为 30.41 Ω/sq，带隙能量从 3.26 eV 到 3。随着 Al 掺杂浓度从 0 at% 增加到 4 at%，16 eV。7.48 × 10-3 (Ω/sq)-1 的最大品质因数对应于具有 2 at% Al 掺杂的 AZO 薄膜的沉积。