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Recrystallization upon solvent vapor annealing and impact of polymer crystallinity on hole transport in poly(3-hexylthiophene):small molecule blends
Molecular Systems Design & Engineering ( IF 3.2 ) Pub Date : 2020-08-26 , DOI: 10.1039/d0me00092b Dorota Chlebosz 1, 2, 3, 4, 5 , Krzysztof Janus 1, 2, 3, 4, 5 , Kinga Danielewicz 4, 5, 6 , Waldemar Goldeman 4, 5, 6 , Agnieszka Czapik 6, 7, 8, 9 , Gunnar Glaßer 3, 10, 11 , Markus Mezger 3, 10, 11 , Adam Kiersnowski 1, 2, 3, 4, 5
Molecular Systems Design & Engineering ( IF 3.2 ) Pub Date : 2020-08-26 , DOI: 10.1039/d0me00092b Dorota Chlebosz 1, 2, 3, 4, 5 , Krzysztof Janus 1, 2, 3, 4, 5 , Kinga Danielewicz 4, 5, 6 , Waldemar Goldeman 4, 5, 6 , Agnieszka Czapik 6, 7, 8, 9 , Gunnar Glaßer 3, 10, 11 , Markus Mezger 3, 10, 11 , Adam Kiersnowski 1, 2, 3, 4, 5
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This work is a systematic study on charge carrier (hole) mobility and structure of binary blends of poly(3-hexylthiophene) (P3HT) with small-molecular aromatic diimides (ADIs): N,N′-di(n-hexyl)benzene-1,2,4,5-tetracarboxylic diimide, N,N′-di(n-butyl)- or N,N′-di(n-hexyl)naphthalene-1,4,5,8-tetracarboxylic diimide. The blends were spray coated to form films and kinetically stabilized by solvent vapor annealing that caused their recrystallization. The hole mobility determined in organic field-effect transistors based on the blends was found to correlate with the molecular architecture of ADIs (their alkyl-to-aromatic ratios). Generally, the alkyl-dominated ADIs enhanced or were inert, whereas the aromatic-dominated ADIs worsened the hole mobility measured in the blends directly after the spray coating. Grazing-incidence X-ray diffraction studies supported by electron microscopy indicated that the solvent vapor annealing caused the ADI crystals to grow, but reduced (typically by 35%) P3HT crystal sizes, and caused their reorientation from ‘face-on’ to ‘edge-on’. ADIs enhanced the crystallinity degree of P3HT in some blends, even up to as high as ∼0.9. Flipping the orientation, reducing the sizes of P3HT crystals and increasing P3HT crystallinity degree in the blends all together contributed to ∼2- to ∼7-fold improvements in hole mobility. ADIs' molecular architecture exerted a sound influence on orientation and sizes of P3HT crystal domains. Reduction in P3HT crystal sizes and increasing the number of P3HT crystal domains exerted a stronger influence on hole mobility increase than the face-on to edge-on reorientation.
中文翻译：
溶剂蒸气退火后的重结晶以及聚合物结晶度对聚（3-己基噻吩）：小分子共混物中空穴传输的影响
这项工作是对聚（3-己基噻吩）（P3HT）与小分子芳族二酰亚胺（ADIs）的二元共混物的电荷载流子（空穴）迁移率和结构的系统研究：N，N'-二（正己基）苯-1,2,4,5-四羧酸二酰亚胺，N，N'-二（正丁基）-或N，N'-二（n-己基）萘-1,4,5,8-四羧酸二酰亚胺。将共混物喷涂形成薄膜，并通过溶剂蒸汽退火使其再结晶而动力学稳定。发现在有机场效应晶体管中基于共混物确定的空穴迁移率与ADIs的分子结构（其烷基与芳族比）相关。通常，烷基支配的ADIs增强或呈惰性，而芳族支配的ADIs使喷涂后直接在共混物中测得的空穴迁移率变差。电子显微镜支持的掠入射X射线衍射研究表明，溶剂蒸汽退火导致ADI晶体长大，但P3HT晶体尺寸减小（通常减小了35％），并导致其从“面对”到“边缘”的重新定向。 -上'。ADI提高了某些共混物中P3HT的结晶度，甚至高达〜0.9。翻转取向，减小P3HT晶体的尺寸并增加共混物中P3HT的结晶度有助于将空穴迁移率提高约2至约7倍。ADIs的分子结构对P3HT晶域的取向和大小产生了良好的影响。P3HT晶体尺寸的减小和P3HT晶体域数量的增加，对空穴迁移率的增加产生的影响要比面对面到边缘对面的重新取向大。分子结构对P3HT晶域的取向和大小产生了良好的影响。P3HT晶体尺寸的减小和P3HT晶域数量的增加，对空穴迁移率的增加的影响要比面对面至边对面的重新取向大。分子结构对P3HT晶域的取向和大小产生了良好的影响。P3HT晶体尺寸的减小和P3HT晶域数量的增加，对空穴迁移率的增加的影响要比面对面至边对面的重新取向大。
更新日期：2020-09-28
中文翻译：
溶剂蒸气退火后的重结晶以及聚合物结晶度对聚（3-己基噻吩）：小分子共混物中空穴传输的影响
这项工作是对聚（3-己基噻吩）（P3HT）与小分子芳族二酰亚胺（ADIs）的二元共混物的电荷载流子（空穴）迁移率和结构的系统研究：N，N'-二（正己基）苯-1,2,4,5-四羧酸二酰亚胺，N，N'-二（正丁基）-或N，N'-二（n-己基）萘-1,4,5,8-四羧酸二酰亚胺。将共混物喷涂形成薄膜，并通过溶剂蒸汽退火使其再结晶而动力学稳定。发现在有机场效应晶体管中基于共混物确定的空穴迁移率与ADIs的分子结构（其烷基与芳族比）相关。通常，烷基支配的ADIs增强或呈惰性，而芳族支配的ADIs使喷涂后直接在共混物中测得的空穴迁移率变差。电子显微镜支持的掠入射X射线衍射研究表明，溶剂蒸汽退火导致ADI晶体长大，但P3HT晶体尺寸减小（通常减小了35％），并导致其从“面对”到“边缘”的重新定向。 -上'。ADI提高了某些共混物中P3HT的结晶度，甚至高达〜0.9。翻转取向，减小P3HT晶体的尺寸并增加共混物中P3HT的结晶度有助于将空穴迁移率提高约2至约7倍。ADIs的分子结构对P3HT晶域的取向和大小产生了良好的影响。P3HT晶体尺寸的减小和P3HT晶体域数量的增加，对空穴迁移率的增加产生的影响要比面对面到边缘对面的重新取向大。分子结构对P3HT晶域的取向和大小产生了良好的影响。P3HT晶体尺寸的减小和P3HT晶域数量的增加，对空穴迁移率的增加的影响要比面对面至边对面的重新取向大。分子结构对P3HT晶域的取向和大小产生了良好的影响。P3HT晶体尺寸的减小和P3HT晶域数量的增加，对空穴迁移率的增加的影响要比面对面至边对面的重新取向大。
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