Facile Silver-Incorporated Method of Tuning the Back Gradient of Cu(In,Ga)Se2 Films,ACS Applied Energy Materials

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Facile Silver-Incorporated Method of Tuning the Back Gradient of Cu(In,Ga)Se2 Films
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-08-25 , DOI: 10.1021/acsaem.0c01644
Yunxiang Zhang ₁ , Zhaojing Hu ₁ , Shuping Lin ₁ , Shiqing Cheng ₁ , Zhichao He ₁ , Chaojie Wang ₁ , Zhiqiang Zhou ₁ , Yun Sun ₁ , Wei Liu ₁

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An appropriate gallium (Ga) back gradient in Cu(In,Ga)Se₂ (CIGS) films is vital to achieve solar cells with good device performances. As a steeper Ga back gradient can induce an enhanced electric potential variation or affinity (conduction band) variation, it can make the electrons stay away from the rear contact. In addition, significant lattice distortions can be found at the back gradient of CIGS films, which increases carrier recombination and impedes carrier transport. In this study, by employing an Ag–Se precursor before the CIGS process, silver (Ag) is purposefully doped to the back gradient of CIGS films to reduce the lattice distortions. A comparison of the structure and device characteristics of CIGS films with different Ag–Se deposition durations is carried out. This study suggests that the addition of an Ag–Se precursor can enhance the quality of the CIGS film and modify the back gradient as well as enhance recrystallization, which improves the device performance of solar cells. Simultaneously, the enhanced grain sizes achieved by the Ag-treated process are helpful for the improvement of carrier mobility and the reduction of boundary recombination in CIGS films. Furthermore, the accumulation of indium caused by the Ag–Se precursor film in the first stage should contribute to the formation of a modified back gradient. This work offers an easy route for the control of the Ga back gradient in CIGS thin film solar cells.

中文翻译：

掺银的Cu（In，Ga）Se ₂薄膜反梯度调整方法

Cu（In，Ga）Se _2中适当的镓（Ga）反向梯度（CIGS）膜对于获得具有良好器件性能的太阳能电池至关重要。由于较陡的Ga反向梯度会引起电势变化或亲和力（导带）变化，因此可以使电子远离后触点。此外，在CIGS薄膜的反梯度处会发现明显的晶格畸变，这会增加载流子复合并阻碍载流子传输。在这项研究中，通过在CIGS工艺之前使用Ag-Se前体，将银（Ag）故意掺杂到CIGS膜的反梯度中，以减少晶格畸变。比较了具有不同Ag-Se沉积时间的CIGS膜的结构和器件特性。这项研究表明，添加Ag-Se前体可以提高CIGS膜的质量，改变背梯度，并增强重结晶，从而提高太阳能电池的器件性能。同时，通过Ag处理的方法获得的增加的晶粒尺寸有助于改善载流子迁移率并减少CIGS膜中的边界复合。此外，第一阶段中由Ag-Se前驱物膜引起的铟积累应有助于形成改进的反梯度。这项工作为控制CIGS薄膜太阳能电池的Ga反向梯度提供了一条简便的途径。通过Ag处理工艺获得的增加的晶粒尺寸有助于改善载流子迁移率并减少CIGS膜中的边界复合。此外，第一阶段中由Ag-Se前驱物膜引起的铟积累应有助于形成改进的反梯度。这项工作为控制CIGS薄膜太阳能电池的Ga反向梯度提供了一条简便的途径。通过Ag处理工艺获得的增加的晶粒尺寸有助于改善载流子迁移率并减少CIGS膜中的边界复合。此外，第一阶段中由Ag-Se前驱物膜引起的铟积累应有助于形成改进的反梯度。这项工作为控制CIGS薄膜太阳能电池的Ga反向梯度提供了一条简便的途径。

更新日期：2020-10-26

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