In order to further improve the reliability of high-power output of high-brightness semiconductor lasers, 808 nm semiconductor laser chips with a stripe width of 100 µm were packaged by SiC and AlN heat sinks, and the thermal performance of the composed SiC and AlN devices were investigated. First, the finite element method (FEM) is adopted to simulation and calculation, and then the thermal resistance of the device is measured by wavelength drift method experimentally. Both results show that the thermal resistance of the laser packaged by SiC heat sink is lower and the experimentally measured value is 2.95 K·W−1. In addition, the test results also indicate that the laser packaged by SiC heat sink has higher output power and higher wall-plug efficiency. The output power attains 10.3 W at the injection current of 10 A. and the maximum wall-plug efficiency can reach 53.5% at 25°C.

中文翻译：

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SiC散热片封装的高亮度808nm半导体激光二极管

为了进一步提高高亮度半导体激光器大功率输出的可靠性，采用碳化硅和氮化铝散热片封装808nm条宽100μm半导体激光器芯片，碳化硅和氮化铝复合材料的热性能设备进行了调查。首先采用有限元法(FEM)进行仿真计算，然后通过波长漂移法实验测量器件的热阻。两个结果都表明，采用碳化硅散热器封装的激光器热阻较低，实测值为2.95 K·W-1。此外，测试结果还表明，采用碳化硅散热器封装的激光器具有更高的输出功率和更高的插墙效率。在注入电流为 10 A 时，输出功率达到 10.3 W。