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Transparent conducting SnO2 thin films synthesized by nebulized spray pyrolysis technique: Impact of Sb doping on the different physical properties
Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.mssp.2020.105346
Md. Faruk Hossain , Md. Abdul Hadi Shah , Md. Ariful Islam , Md. Sazzad Hossain

Abstract The impact of antimony (Sb) doping concentration on the different physical properties of transparent conducting tin oxide (SnO2) thin films synthesized through nebulized spray pyrolysis (NSP) method have been explored systematically. X-ray diffraction (XRD) results reveal the tetragonal cassiterite structure of single phase SnO2 and the decrement of crystallite size with rising Sb doping concentration. Uniform and compact surface morphology with continuous distribution of grains and reduction of grain size with increasing dopant amount are illustrated by scanning electron microscopy (SEM). The stoichiometry of SnO2 film with 2% Sb doping is confirmed by energy dispersive X-ray spectroscopy (EDS) study. The optical transmittance is more than 85% in the visible region for undoped film and enhanced in the near infrared (NIR) spectral region for all the films. The transparency is reduced and the optical band gap is found to increase from 3.69 eV to 3.90 eV upon Sb inclusion. The extinction coefficient, refractive index, dielectric constant, dissipation factor, volume energy loss function, surface energy loss function, optical conductivity and optical density of the films are determined and interpreted for different dopant concentrations. The photoluminescence (PL) spectrum demonstrates the enhancement of emission intensity with increasing Sb incorporation representing its suitability in the application of solid state lighting. The lowest resistivity of 6.435 × 10−4 Ω cm and the highest carrier concentration of 1.316 × 1021 cm−3 are achieved for the film with 8% Sb doping concentration. The mobility of the studied degenerated films is varied from 54.743 cm2/Vs for undoped films to 7.378 cm2/Vs for 8% Sb doped film and limited by ionized impurity scattering. The film deposited with 2% Sb doping level exhibits the highest figure of merit values in both visible and NIR wavelength region indicating its better role in optoelectronic applications.

中文翻译:

通过雾化喷雾热解技术合成的透明导电 SnO2 薄膜:Sb 掺杂对不同物理性质的影响

摘要 系统研究了锑 (Sb) 掺杂浓度对通过雾化喷雾热解 (NSP) 法合成的透明导电氧化锡 (SnO2) 薄膜不同物理性质的影响。X 射线衍射 (XRD) 结果揭示了单相 SnO2 的四方锡石结构和晶粒尺寸随着 Sb 掺杂浓度的增加而减小。扫描电子显微镜 (SEM) 显示了均匀致密的表面形态,晶粒连续分布,晶粒尺寸随着掺杂量的增加而减小。能量色散 X 射线光谱 (EDS) 研究证实了具有 2% Sb 掺杂的 SnO2 薄膜的化学计量。未掺杂薄膜在可见光区的透光率超过 85%,所有薄膜在近红外 (NIR) 光谱区的透光率都提高。在包含 Sb 后,透明度降低,并且发现光学带隙从 3.69 eV 增加到 3.90 eV。薄膜的消光系数、折射率、介电常数、耗散因数、体积能量损失函数、表面能损失函数、光导率和光密度被确定和解释为不同的掺杂浓度。光致发光 (PL) 光谱表明随着 Sb 掺入的增加,发射强度会增强,这表明其适用于固态照明应用。最低电阻率为 6.435 × 10−4 Ω cm,最高载流子浓度为 1。对于具有 8% Sb 掺杂浓度的薄膜,实现了 316 × 1021 cm-3。所研究的退化薄膜的迁移率从未掺杂薄膜的 54.743 cm2/Vs 变化到 8% Sb 掺杂薄膜的 7.378 cm2/Vs,并受离子化杂质散射的限制。以 2% Sb 掺杂水平沉积的薄膜在可见光和 NIR 波长区域均表现出最高的品质因数,表明其在光电应用中的作用更好。
更新日期:2021-01-01
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