Abstract Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resistance stanogermanide contacts on Ge0.91Sn0.09 substrates. Three different metals (Ni, Pt, and Ti) were characterized using a wide laser energy density range (100–500 mJ/cm2). Electrical performance, surface quality, cross-sectional crystallographic, and elemental analysis have been systematically examined in order to identify the ideal process window. Electrical characterization showed that the samples processed by LTA had lower resistance variability compared with the rapid thermal anneal (RTA) counterpart. Among the three metals used, Ni and Pt were the most promising candidates for future sub-nm applications based on the low resistance values. The stanogermanide alloys suffered a high degeneration as the LTA thermal budget increased. Cross-sectional elemental analysis showed a highly unusual Sn segregation effect, particularly for high LTA energy densities, where vertical columns of Sn-rich alloy were formed, also known as cell formation, similar to that seen for Sb hyperdoping of Si when using LTA. This effect is linked to solid solubility and distribution coefficient of Sn in Ge, as well as the velocity of the liquid-solid interface during crystallization as the samples cool.

中文翻译：

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在 Ge0.91Sn0.09 上使用脉冲激光热退火在 stanogermanides 中形成细胞

摘要 脉冲激光热退火 (LTA) 在 Ge0.91Sn0.09 衬底上形成低电阻锡锗化物触点已被彻底研究。使用宽激光能量密度范围 (100–500 mJ/cm2) 对三种不同的金属（Ni、Pt 和 Ti）进行表征。电气性能、表面质量、横截面晶体学和元素分析已被系统地检查，以确定理想的工艺窗口。电气特性表明，与快速热退火 (RTA) 对应物相比，由 LTA 处理的样品具有更低的电阻变异性。在使用的三种金属中，Ni 和 Pt 是基于低电阻值的未来亚纳米应用最有希望的候选者。随着 LTA 热预算的增加，锡锗化物合金遭受高度退化。横截面元素分析显示了非常不寻常的 Sn 偏析效应，特别是对于高 LTA 能量密度，其中形成了富锡合金的垂直柱，也称为单元形成，类似于使用 LTA 时 Sb 超掺杂 Si 所见。这种效应与 Sn 在 Ge 中的固溶度和分布系数，以及结晶过程中样品冷却时液固界面的速度有关。