Engineering sulfur vacancies in the basal plane of MoS₂ is an effective method to enhance its catalytic activity. However, the traditional methods are only effective for multilayer or monolayer MoS₂ supported on the substrate (such as Si/SiO wafer or carbon paper), which are not applied in bulk or commercial MoS₂. In this work, we developed a simple and general chemical reduction method for engineering S-vacancies in the MoS₂ basal plane and additional active edge sites, which can be exploited to improve the HER catalytic performance of MoS₂. The optimized MoS₂ nanosheets with S-vacancies exhibit excellent HER activity with a small overpotential of 190 mV at large density of 10 mA/cm² and a low Tafel slope of 54 mV decade⁻¹. Moreover, prominent electrochemical durability was also achieved. This finding proposes an effective strategy to fabricating S-vacancies for activating basal plane of 2D transition metal chalcogenides materials.

MoS ₂基面中的工程硫空位是增强其催化活性的有效方法。然而，传统方法仅对支撑在基板上的多层或单层MoS ₂有效（例如，Si / SiO晶片或复写纸），而不适用于散装或商用MoS ₂。在这项工作中，我们开发了一种简单而通用的化学还原方法，用于工程化MoS ₂基础平面中的S空位和其他活性边缘位点，可用于改善MoS ₂的HER催化性能。优化的MoS ₂具有S空位的纳米片表现出出色的HER活性，在10 mA / cm ^2的大密度下具有190 mV的小过电势，而在54 mV ^-1的低Tafel斜率下。此外，还获得了显着的电化学耐久性。这一发现提出了一种有效的策略来制造用于激活2D过渡金属硫族化物材料基面的S空位。