Abstract A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintronics due to the longer spin diffusion. By utilizing optimal temperature process and V/III flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb20Fe62Co18/Ru/Co40Fe40B20 films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Tb20Fe62Co18 layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25 %. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport.

中文翻译：

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GaAs (110) 通道中的电自旋输运

摘要 由于自旋扩散较长，同质外延的 GaAs (110) 通道引起了半导体自旋电子学领域的极大兴趣。通过利用最佳温度工艺和 V/III 通量比控制，GaAs 层可以在没有严重缺陷的情况下生长。在铁磁体/半导体混合器件中，Tb20Fe62Co18/Ru/Co40Fe40B20 薄膜沉积在 GaAs (110) 通道上作为自旋源，以研究 (110) 取向通道中的自旋输运。为了测量 Hanle 信号，将面内磁场施加到从 Tb20Fe62Co18 层注入的垂直极化自旋。从实验结果来看，GaAs (110) 中的自旋扩散长度比 GaAs (100) 中的自旋扩散长度长 25%。