Low threading dislocation density (TDD) in GaAs epitaxial layers grown on silicon substrate (e.g. TDD < 10 6 cm −2 ) is critical for GaAs-based optoelectronic and high-performance electronic devices on silicon. Ge buffers and In x Ga 1-x As/GaAs superlattice layers (SLs) are commonly used to reduce the TDD in GaAs epitaxial layers grown on Si wafers. In previous reports, TDD of ~10 7 cm −2 in GaAs and InGaP layers grown on 200 mm Si wafers was achieved by using Ge buffers only (e.g. Wang et al 2017 Semicond. Sci. Technol. 32 125013) and TDD of ~10 6 cm −2 in GaAs epi-layers for quantum dot lasers on Si was achieved by using SL insertion layers (e.g. Shang et al 2019 IEEE J. Sel. Top. Quantum Electron. 25 1502207). In this work, the effectiveness of the dislocation filtering effect of In x Ga 1-x As/GaAs SLs combined with Ge buffers is invest...

中文翻译：

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在带有和不带有Ge缓冲层的200 mm Si晶片上外延生长InGaAs / GaAs超晶格位错滤光层的有效性

在硅衬底上生长的GaAs外延层中的低螺纹位错密度（TDD）（例如TDD <10 6 cm -2）对于硅上基于GaAs的光电和高性能电子设备至关重要。Ge缓冲层和In x Ga 1-x As / GaAs超晶格层（SL）通常用于减少在Si晶片上生长的GaAs外延层中的TDD。在以前的报告中，仅使用Ge缓冲液（例如，Wang等人2017 Semicond。Sci。Technol。32 125013）和200 nm Si晶圆上生长的GaAs和InGaP层中的TDD约为10 7 cm -2，TDD约为10通过使用SL插入层，可以在Si上的量子点激光器的GaAs外延层中形成6 cm -2的面积（例如Shang等人，2019 IEEE J. Sel。Top。Quantum Electron。25 1502207）。在这项工作中，研究了In x Ga 1-x As / GaAs SL与Ge缓冲液结合的位错过滤效果的有效性...