Silicon-tin (Si1-xSnx) films have been grown using plasma-enhanced chemical vapor deposition on Si (001) substrate. X-ray photoelectron spectroscopy characterization of the thin films show successful substitutional incorporation of Sn in Si lattice up to 3.2%. The X-ray diffraction characterizations show epitaxial growth of Si1-xSnx films (001) direction. The Sn incorporation has been measured using X-ray photoelectron spectrometry and the film uniformity was confirmed using energy dispersive X-ray spectrometry.

中文翻译：

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使用等离子体增强化学气相沉积在 Si 上生长和表征低温 Si1-xSnx

硅锡 (Si1-xSnx) 薄膜已使用等离子体增强化学气相沉积在 Si (001) 衬底上生长。薄膜的 X 射线光电子能谱表征显示 Sn 在 Si 晶格中成功置换掺入高达 3.2%。X 射线衍射表征显示 Si1-xSnx 薄膜 (001) 方向的外延生长。使用 X 射线光电子能谱法测量了 Sn 结合，并使用能量色散 X 射线光谱法确认了膜的均匀性。