In the current study, we have considered the induced phase transitions in Al/InSe thin film substrates and employing them for fabrication of InSe/Cu₂O tunneling channels. The InSe substrates are observed to prefer the transition from the hexagonal γ‐In₂Se₃ to the rarely observed tetragonal InSe. The phase transitions are obtained by the thermally assisted diffusion of aluminum, which was already kept at 250°C in a vacuum media of 10⁻⁵ mbar before the compensation of InSe. The tetragonal InSe also induced the crystallization of orthorhombic Cu₂O with acceptable level of lattice matching along the a‐axis. The Al/InSe/Cu₂O/Au heterojunctions, which are electrically analyzed are observed to exhibit rectifying features with the current conduction being dominated by electric fields assisted thermionic emission (tunneling) through a barrier of width of 5.5 to 14.0 nm and barrier height of 0.19 to 0.30 eV. The ac analyses of the capacitance and conductance spectra of this device have shown that it can exhibit high/low capacitance and frequency dependent conductance switching modes at 0.12 GHz in addition to negative capacitance effect in the range of 0.12 to 1.80 GHz. The features of the device are promising as they indicate the suitability of the device for fabrication of field effect transistors, memory devices, and ultrafast switches.

中文翻译：

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热铝基底在InSe中引起的六角-四边形相变以及Al / InSe / Cu2O pn隧穿器件的性能

在当前的研究中，我们已经考虑了Al / InSe薄膜基板中的感应相变，并将其用于InSe / Cu ₂ O隧穿通道的制造。所述InSe系基板观察到喜欢从六边形的过渡γ -In ₂硒₃至很少观察到四方InSe系。通过铝的热辅助扩散获得相变，铝在补偿InSe之前已在10 ^-5 mbar的真空介质中保持在250°C 。四方InSe还诱导了正交晶Cu ₂ O的结晶，其沿a轴的晶格匹配水平可接受。Al / InSe / Cu ₂观察到经过电分析的O / Au异质结表现出整流特性，其电流传导主要由电场辅助的热电子发射（隧穿）穿过宽度为5.5至14.0 nm的势垒和高度为0.19至0.30 eV的势垒。对该器件的电容和电导谱的交流分析表明，该器件在0.12 GHz范围内还可以显示高/低电容和与频率相关的电导率切换模式，此外还可以在0.12至1.80 GHz范围内产生负电容效应。该器件的功能很有希望，因为它们表明该器件适用于制造场效应晶体管，存储器件和超快开关。