Abstract Terbium co-doped CdO: Zn thin films have been coated by the facile and an efficient spray pyrolysis technique on the substrate of glass to tune its optical and electrical properties. From XRD analysis, all the diffraction peaks strongly exhibit polycrystalline nature with perfect cubic structure followed by preferential orientation was changed from (111) plane to (200) plane. The nature of the crystal structure and crystallite size is reduced from 20.4 nm to 16.5 nm by increasing Tb doping concentration due to defects in the lattice. The atomic force microscope AFM mages clearly show that the film's grain size decreases with the Tb dopant. The elements such as Cd, Zn, O, and Tb exist in the elemental mapping and EDX spectra. The transmittance is varied from 70, and 82% at 800 nm, and the maximum bandgap of 3.06 eV is observed for 1.5 wt.% degenerate doping concentration. PL emission at 435 nm shows a high intense peak attribute to the crystalline quality of the film. The electrical property of the film has been greatly improved with doping concentration, which is useful for optoelectronic devices. The TCO based on the 1.5 wt.% Tb co-doped CdO: Zn film shows an improved performance (higher transmission of 82%, lowest resistivity of 7.48 x 10-4 Ω cm, the highest carrier concentration of 11.3x1020 cm-3). These results propose a much simpler route to achieve high-quality Terbium co-doped CdO: Zn thin films for TCO applications.

中文翻译：

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通过雾化器喷雾热解法涂覆铽共掺杂的 CdO: Zn 薄膜的光电性能改善

摘要 铽共掺杂的CdO:Zn薄膜通过简便高效的喷雾热解技术涂覆在玻璃基板上，以调节其光学和电学性能。从 XRD 分析来看，所有的衍射峰都强烈地表现出具有完美立方结构的多晶性质，然后优先取向从（111）面变为（200）面。由于晶格中的缺陷，通过增加 Tb 掺杂浓度，晶体结构和微晶尺寸的性质从 20.4 nm 减小到 16.5 nm。原子力显微镜 AFM 图像清楚地表明薄膜的晶粒尺寸随 Tb 掺杂剂而减小。Cd、Zn、O 和 Tb 等元素存在于元素映射和 EDX 光谱中。透射率在 800 nm 处为 70% 和 82%，观察到 1 的最大带隙为 3.06 eV。5 wt.% 简并掺杂浓度。435 nm 处的 PL 发射显示了薄膜结晶质量的高强度峰值。随着掺杂浓度的增加，薄膜的电性能得到了很大的改善，这对光电器件很有用。基于 1.5 wt.% Tb 共掺杂 CdO: Zn 薄膜的 TCO 显示出改进的性能（更高的透射率为 82%，最低电阻率为 7.48 x 10-4 Ω cm，最高载流子浓度为 11.3x1020 cm-3） . 这些结果提出了一种更简单的途径来实现用于 TCO 应用的高质量铽共掺杂 CdO: Zn 薄膜。这对光电器件很有用。基于 1.5 wt.% Tb 共掺杂 CdO: Zn 薄膜的 TCO 显示出改进的性能（更高的透射率为 82%，最低电阻率为 7.48 x 10-4 Ω cm，最高载流子浓度为 11.3x1020 cm-3） . 这些结果提出了一种更简单的途径来实现用于 TCO 应用的高质量铽共掺杂 CdO: Zn 薄膜。这对光电器件很有用。基于 1.5 wt.% Tb 共掺杂 CdO: Zn 薄膜的 TCO 显示出改进的性能（更高的透射率为 82%，最低电阻率为 7.48 x 10-4 Ω cm，最高载流子浓度为 11.3x1020 cm-3） . 这些结果提出了一种更简单的途径来实现用于 TCO 应用的高质量铽共掺杂 CdO: Zn 薄膜。