Abstract We investigated the thickness dependencies of SiO2/BaOx layers on the structural and interfacial properties of a layered gate dielectric on 4H-SiC. The deposition of the SiO2 layer on the BaOx layer changed the stoichiometry and distribution of Ba-silicate in the gate dielectric. Moreover, the interface trap density reduced with increasing SiO2 thickness. The crystal structure changed from amorphous to poly-crystalline with increasing BaOx thickness, indicating the existence of a critical thickness for crystallization. These results show that the properties of gate dielectric/SiC interfaces can be modified by varying the SiO2/BaOx layer thickness.

中文翻译：

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SiO2/BaOx 层的厚度对 4H-SiC 上分层栅极电介质的界面特性的依赖性

摘要 我们研究了 SiO2/BaOx 层的厚度对 4H-SiC 上分层栅极电介质的结构和界面特性的依赖性。BaOx 层上 SiO2 层的沉积改变了栅电介质中 Ba 硅酸盐的化学计量和分布。此外，界面陷阱密度随着 SiO2 厚度的增加而降低。随着 BaOx 厚度的增加，晶体结构从非晶态变为多晶态，表明存在结晶临界厚度。这些结果表明，可以通过改变 SiO2/BaOx 层厚度来改变栅极电介质/SiC 界面的特性。