Abstract We report on the room temperature work function value of Na0.5Bi0.5TiO3 (NBT) thin films and bias dependent analog bipolar resistive switching characteristics in Au/Na0.5Bi0.5TiO3/Pt thin film hetero-structure. Na0.5Bi0.5TiO3 thin films crystallize in rhombohedral (R3c) structure, confirmed from the Raman and X-ray diffraction studies. Scanning electron microscope images indicates that the surface morphology is smooth and films grown in rod-like structure vertically. Oxidation states of Na, Bi and Ti elements are confirmed from the X-ray photoelectron spectroscopy technique. The device retains its bipolar switching behavior in direct current (dc) sweeping mode by an applied voltage of ±3 V, without any deterioration suggests good retention characteristics. The ON/OFF resistance ratio (RON/ROFF) between high and low resistance states is of the order of 10. The role of oxygen vacancies and charge transport process in low resistance state (LRS) and high resistance states (HRS) are examined using Ohmic and space-charge-limited conduction mechanisms. The current-voltage (I–V) characteristics show space-charge-limited conduction dominates at high electric fields. The average work function value of the Na0.5Bi0.5TiO3thin film at room temperature is found to be 5.09 eV. The interface interactions of Au/NBT and NBT/Pt thin layers and their role in initiating resistive switching is discussed in detailed.

中文翻译：

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Au/Na0.5Bi0.5TiO3/Pt异质结构薄膜中模拟双极电阻开关和功函数的机制

摘要 我们报告了 Na0.5Bi0.5TiO3 (NBT) 薄膜的室温功函数值和 Au/Na0.5Bi0.5TiO3/Pt 薄膜异质结构中偏置相关的模拟双极电阻开关特性。从拉曼和 X 射线衍射研究证实，Na0.5Bi0.5TiO3 薄膜结晶为菱面体 (R3c) 结构。扫描电子显微镜图像表明表面形态光滑，薄膜垂直生长为棒状结构。Na、Bi 和 Ti 元素的氧化态由 X 射线光电子能谱技术证实。该器件通过施加 ±3 V 的电压在直流 (dc) 扫描模式下保持其双极开关行为，没有任何恶化表明良好的保持特性。高阻态和低阻态之间的开/关电阻比 (RON/ROFF) 约为 10。氧空位和电荷传输过程在低阻态 (LRS) 和高阻态 (HRS) 中的作用使用欧姆和空间电荷限制传导机制。电流-电压 (I-V) 特性表明空间电荷限制传导在高电场下占主导地位。发现 Na0.5Bi0.5TiO3 薄膜在室温下的平均功函数值为 5.09 eV。详细讨论了 Au/NBT 和 NBT/Pt 薄层的界面相互作用及其在启动电阻转换中的作用。氧空位和电荷传输过程在低电阻状态 (LRS) 和高电阻状态 (HRS) 中的作用使用欧姆和空间电荷限制传导机制进行检查。电流-电压 (I-V) 特性表明空间电荷限制传导在高电场下占主导地位。发现 Na0.5Bi0.5TiO3 薄膜在室温下的平均功函数值为 5.09 eV。详细讨论了 Au/NBT 和 NBT/Pt 薄层的界面相互作用及其在启动电阻转换中的作用。氧空位和电荷传输过程在低电阻状态 (LRS) 和高电阻状态 (HRS) 中的作用使用欧姆和空间电荷限制传导机制进行检查。电流-电压 (I-V) 特性表明空间电荷限制传导在高电场下占主导地位。发现 Na0.5Bi0.5TiO3 薄膜在室温下的平均功函数值为 5.09 eV。详细讨论了 Au/NBT 和 NBT/Pt 薄层的界面相互作用及其在启动电阻转换中的作用。