Abstract

A simple method for manufacturing silicon masks for deep X-ray lithography, conducted with the application of exposure radiation of the spectral range (0.5–7 Å), is described. This method is based on planar silicon technology, which is widely used in the production of semiconductor devices. A significant difference between this method and previously known analogues is that it does not apply the creation of a stop layer by doping during formation of the support membrane of the mask. As the initial blank, a standard (100) oriented silicon wafer is used. The silicon support membrane of the mask is formed in the final stage of its manufacture by plasma-chemical etching of the rear-side of the wafer to a predetermined depth. The thus obtained X-ray masks on a silicon wafer are characterized by relative ease of manufacture, radiation and chemical resistance, geometric stability, and relatively high levels of mechanical strength and X-ray transparency of the support membrane, depending on its thickness, which can be manufactured with good accuracy and within a fairly wide range of ~2.5–50 μm, depending on the purpose of the mask.

中文翻译：

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通过等离子体化学刻蚀制造硅X射线掩模的方法

摘要

描述了一种用于制造深X射线光刻的硅掩膜的简单方法，该方法是使用光谱范围（0.5-7Å）的曝光辐射进行的。该方法基于平面硅技术，该技术广泛用于半导体器件的生产中。该方法与先前已知的类似物之间的显着区别是，它在掩模的支撑膜的形成过程中不通过掺杂来形成停止层。作为初始坯料，使用标准（100）取向的硅片。掩模的硅支撑膜在其制造的最后阶段通过将晶片的背面等离子化学蚀刻至预定深度而形成。如此获得的硅晶片上的X射线掩模的特点是相对易于制造，