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Double- and Triple-Crystal X-Ray Diffraction Analysis of Face-Grown Gd 3 Ga 3 Al 2 O 12 :Ce Crystals
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques ( IF 0.5 ) Pub Date : 2020-08-25 , DOI: 10.1134/s1027451020040060
I. A. Eliovich , V. I. Akkuratov , A. E. Blagov , O. A. Buzanov , M. V. Korghik , A. G. Kulikov , Yu. V. Pisarevsky , P. A. Prosekov , A. V. Targonskii , M. V. Kovalchuk

Abstract

Crystals of gadolinium–gallium–aluminum garnet doped with cerium ions (Gd3Ga3Al2O12:Ce) are analyzed by X-ray diffractometry and X-ray topography. These crystals have a number of unique scintillation characteristics (including a high specific light yield, fast emission kinetics, and high energy and time resolutions), which make them promising for designing detectors of ionizing radiation in a wide energy range. It is shown that the methods used make it possible to carry out the further optimization of preparation processes of bulk crystals by revealing specific features of their growth (e.g., facet inhomogeneity, which is characteristic of Czochralski-grown single crystals).


中文翻译:

生长的Gd 3 Ga 3 Al 2 O 12:Ce晶体的双晶体和三晶体X射线衍射分析

摘要

用X射线衍射仪和X射线形貌分析了掺杂铈离子的(-镓-铝石榴石晶体(Gd 3 Ga 3 Al 2 O 12:Ce)。这些晶体具有许多独特的闪烁特性(包括高的比光产率,快速的发射动力学以及高的能量和时间分辨率),这使其有希望在宽能范围内设计电离辐射探测器。结果表明,所使用的方法可以通过揭示大块晶体的生长特征(例如,小平面不均匀性,这是切克劳斯基生长的单晶的特征)来进一步优化大块晶体的制备工艺。
更新日期:2020-08-25
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