Abstract

The paper presents the results of modeling the distributions of minority charge carriers generated by a wide electron beam in two-layer semiconductor structures. The analytical results obtained using the matrix method are compared with the results of calculations obtained using the numerical method of finite differences. The studies are carried out for epitaxial structures of “solid solution of cadmium-mercury telluride –cadmium telluride” and two-layer gallium arsenide.

中文翻译：

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平面多层半导体结构中宽电子束产生的少数载流子分布的建模研究

摘要

本文介绍了对两层半导体结构中由宽电子束产生的少数载流子分布进行建模的结果。将使用矩阵方法获得的分析结果与使用有限差分数值方法获得的计算结果进行比较。对“碲化镉汞-碲化镉”和两层砷化镓的外延结构进行了研究。