This present paper is concerned with the analytical study of the amplitude modulation and demodulation of a coherent electromagnetic wave in magnetized doped III-V semiconductors. Utilizing the hydrodynamic model of a semiconductor plasma, the modulation indices for upper (+) and lower (–) side bands have been obtained. The incorporation of carrier diffusion in the nonlinear laser-semiconductor interaction adds new dimension to the analysis. The numerical estimations have been made for n-InSb crystal at liquid nitrogen temperature illuminated by frequency doubled pulsed 10.6 µm CO₂ laser. The problem has been analyzed in two different wave regimes (in the presence as well as absence of phenomenological acoustic damping parameter (Γ_a) over a wide range of externally applied magnetic field (incorporated in terms of cyclotron frequency ω_c). The results indicate that in absence of damping parameter, the absorption of coherent electromagnetic radiation takes place completely in all possible wavelength regimes when ω_c~ (v² + ω)^1/2; v and ω₀ being the electron collision frequency and pump frequency, respectively. Moreover, the carrier diffusion modifies amplitude modulation and demodulation processes significantly. The damping parameter additionally assumes a significant role in choosing the range of parameters and selecting the modulated side band mode.

中文翻译：

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磁化掺杂III-V半导体中相干电磁波的振幅调制和解调

本文涉及磁化掺杂III-V半导体中相干电磁波的振幅调制和解调的分析研究。利用半导体等离子体的流体动力学模型，获得了上（+）和下（-）边带的调制指数。载流子扩散在非线性激光-半导体相互作用中的结合为分析增加了新的维度。已通过倍频脉冲10.6 µm CO ₂激光器在液氮温度下对n-InSb晶体进行了数值估算。该问题已经在两个不同的波的制度进行分析（在存在以及不存在的现象学声阻尼参数（Γ_一个）在宽范围的外部施加的磁场的（在回旋频率ω方面并入_Ç）。结果表明，在不存在阻尼参数的，相干的电磁辐射的吸收发生完全在其所有可能的波长范围时ω _Ç〜（V ² +ω ）^1/2 ; v和ω ₀，并且分别为电子碰撞频率和泵频率。而且，载流子扩散显着地改变了幅度调制和解调过程。在选择参数范围和选择调制边带模式时，阻尼参数还起着重要作用。