Cubic boron nitride (cBN) single crystals are synthesized under high temperature and high pressure in the Li-based system. The growth defects on hexagonal and triangular (111) surfaces of cBN single crystals after rapid cooling are discussed systemically for the first time using the atomic force microscope. Some impurity particles, triangle cone hole defects, lamellar-fault structures, and big steps are obvious on the surfaces of cBN single crystals. The formation mechanism of these defects is analyzed briefly at the synthetic process of cBN single crystals, and the growth mechanism of cBN single crystals transform from the two-dimensional growth to dislocation growth mechanism under high temperature and high pressure.

中文翻译：

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高温高压下立方氮化硼单晶缺陷生长分析

立方氮化硼 (cBN) 单晶是在高温高压下在锂基体系中合成的。首次利用原子力显微镜系统讨论了快速冷却后cBN单晶六边形和三角形(111)表面的生长缺陷。cBN单晶表面有明显的杂质颗粒、三角锥孔缺陷、层状断层结构和大台阶。在cBN单晶的合成过程中简要分析了这些缺陷的形成机制，cBN单晶的生长机制从二维生长转变为高温高压下的位错生长机制。