Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study a (LSMO) oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.

中文翻译：

---

使用同步加速器分析 La0.7Sr0.3MnO3 钙钛矿锰矿的能带结构

氧化物半导体及其在下一代器件中的应用由于其各种光、电和磁特性而受到广泛关注。对于各种应用，了解这些特性及其机制也非常重要。这些氧化物的各种特性源于能带结构。在这项研究中，我们介绍了一种使用软 X 射线能源的能带结构分析技术来研究 (LSMO) 氧化物半导体。能带结构由价带、导带、带隙、功函数和电子亲和势形成。这些可以通过使用同步辐射的二次电子截止、价带谱、O 1s 核心电子和 O K 边缘测量来确定。