Perovskite‐based photomemory adopting a floating‐gate architecture recently attracts research attention for developing efficient photo‐recording devices due to its simplified structure and non‐contact light‐programming feature. Herein, the memory characteristics of such type device is improved by the precise control of the size of perovskite nanocrystals (NCs) in the hybrid floating gate. Compared to the previous case of using polystyrene (PS) as the host polymer matrix, a N‐containing polymer, poly(2‐vinyl pyridine) (P2VP), is revealed to better regulate the size of embedded perovskite NCs into the nanometer level (7–9 nm) owing to the intense coordination between the N atom in P2VP and the Pb²⁺ ions of perovskite through Lewis acid‐base interaction. As benefitting from the reduced current dissipation and interfacial charge recombination at the gate/channel interface, the P2VP‐derived photomemory not only delivers a much higher On/Off current ratio (10⁵) than the value (10³) of the reference PS‐based device but also requires a much shorter illumination time (5 s) and low drain voltage (‐1 V) to achieve decent photo‐recording function. Besides, it possesses good long‐term retention for 10⁴ s, excellent stress endurance over 100 cycles, and respectable ambient stability over 6 months due to the well isolation of perovskite NCs in the P2VP matrix.

中文翻译：

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通过在混合浮动门中钙钛矿纳米晶体的尺寸约束来提高基于钙钛矿的非易失性光记忆性能

基于钙钛矿的浮动栅架构的光记忆体由于其简化的结构和非接触式光编程功能，最近吸引了研究者的关注，以开发高效的光记录装置。在此，通过精确控制混合浮栅中钙钛矿纳米晶体（NC）的尺寸来改善这种类型的器件的存储特性。与以前使用聚苯乙烯（PS）作为主体聚合物基质的情况相比，发现含N的聚合物聚（2-乙烯基吡啶）（P2VP）可以更好地将嵌入的钙钛矿NC的尺寸调节到纳米水平（ 7–9 nm）是由于P2VP中的N原子与Pb ²⁺之间的强烈配位路易斯酸碱相互作用产生的钙钛矿离子。由于受益于栅极/通道接口处的电流耗散减少和界面电荷复合，P2VP衍生的光存储器不仅提供比参考PS-值（10 ³）高得多的开/关电流比（10 ⁵）。设备，但还需要更短的照明时间（5 s）和较低的漏极电压（-1 V）才能实现不错的照片记录功能。此外，由于钙钛矿型NCs在P2VP基质中的良好隔离，它具有10 ⁴ s的良好长期保持性，在100个循环中具有出色的应力承受能力以及在6个月内具有良好的环境稳定性。