Abstract In the past few years, a hot topic in both research and industrialization of p-type multi-crystalline silicon (mc-Si) solar cells is to investigate the mechanism, measurement and mitigation of the light- and elevated temperature-induced degradation (LeTID), which has been found to be a bulk-sensitive degradation behavior and is dependent on the degradation condition. In this paper, we study the influence of silicon bulk property on LeTID from five representative positions along a relative low resistivity (0.82–1.33 Ω cm) p-type mc-Si brick. The evolution of degradation and regeneration under different laser illumination conditions are investigated. Identical defect capture cross section ratio k values of ~35 at mid-gap along the brick height are found. For the first time, the activation energy for degradation (Ea,deg) and regeneration (Ea,reg) along the brick are studied, which shows Ea,deg = Ea,reg and a tendency of larger values towards the brick bottom. These results indicate that the LeTID in the whole brick might be induced by a single defect and thus mitigated in a single manner. Besides, a laser illumination of 45 kW/m2 at 142 °C for 100 s is able to induce over 90% degradation for all wafers, which could be used as a universal and fast LeTID test condition.

中文翻译：

---

激光照射下工业多晶硅晶片中 LeTID 缺陷的演变 - 砖中晶片位置和温度的依赖性

摘要 过去几年，p型多晶硅（mc-Si）太阳能电池研究和产业化的一个热点是研究光和高温诱导退化的机制、测量和缓解。 LeTID)，已被发现是一种体积敏感的降解行为，并且取决于降解条件。在本文中，我们从相对低电阻率 (0.82–1.33 Ω cm) 的 p 型 mc-Si 砖的五个代表性位置研究了硅体特性对 LeTID 的影响。研究了不同激光照射条件下降解和再生的演变。发现沿砖高度的中间间隙处相同的缺陷捕获横截面比率 k 值约为 35。降解（Ea,deg）和再生（Ea, reg) 沿着砖被研究，这表明 Ea,deg = Ea,reg 和朝向砖底部的较大值的趋势。这些结果表明整块砖中的 LeTID 可能是由单个缺陷引起的，因此可以通过一种方式减轻。此外，45 kW/m2 的激光照射在 142 °C 下持续 100 s 能够导致所有晶片的退化超过 90%，这可以用作通用和快速的 LeTID 测试条件。